All Transistors. 2SA1624 Datasheet

 

2SA1624 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1624
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

 2SA1624 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1624 Datasheet (PDF)

 ..1. Size:128K  sanyo
2sa1624.pdf

2SA1624
2SA1624

 8.1. Size:102K  1
2sa1623.pdf

2SA1624
2SA1624

 8.2. Size:184K  toshiba
2sa1620.pdf

2SA1624
2SA1624

2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -300 mABase current IB -60

 8.3. Size:194K  toshiba
2sa1621.pdf

2SA1624
2SA1624

2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC4210 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -

 8.4. Size:147K  nec
2sa1627.pdf

2SA1624
2SA1624

 8.5. Size:194K  nec
2sa1625.pdf

2SA1624
2SA1624

 8.6. Size:131K  nec
2sa1626.pdf

2SA1624
2SA1624

 8.7. Size:97K  utc
2sa1627.pdf

2SA1624
2SA1624

UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching 1TO-126 1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ) PARAMETER SYMBOL VALUE UNIT

 8.8. Size:233K  utc
2sa1627a.pdf

2SA1624
2SA1624

UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage * Low collector saturation voltage. * High-speed switching ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

 8.9. Size:564K  kexin
2sa1620.pdf

2SA1624
2SA1624

SMD Type TransistorsPNP Transistors2SA1620SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-300mA1 2 Collector Emitter Voltage VCEO=-80V+0.1+0.050.95 -0.1 0.1 -0.01+0.1 Complementary to 2SC4209 1.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect

 8.10. Size:570K  kexin
2sa1621.pdf

2SA1624
2SA1624

SMD Type TransistorsPNP Transistors2SA1621SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-800mA1 2 Collector Emitter Voltage VCEO=-30V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SC4210 1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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