2SA1626 Specs and Replacement
Type Designator: 2SA1626
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SP8
2SA1626 Substitution
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2SA1626 datasheet
2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC4209 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -300 mA Base current IB -60 ... See More ⇒
2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC4210 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -... See More ⇒
Detailed specifications: 2SA1619, 2SA162, 2SA1620, 2SA1621, 2SA1622, 2SA1623, 2SA1624, 2SA1625, BC549, 2SA1627, 2SA1628, 2SA1629, 2SA163, 2SA1630, 2SA1633, 2SA1634, 2SA1635
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