2SA1633 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1633
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO247
2SA1633 Transistor Equivalent Substitute - Cross-Reference Search
2SA1633 Datasheet (PDF)
2sa1633.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1633 DESCRIPTION With TO-247 package Complement to type 2SC4278 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and 3 EmitterAbsolute maximum ratings(Tc=25
2sa1633.pdf
isc Silicon PNP Power Transistor 2SA1633DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOHigh Power DissipationHigh Current CapacityComplement to Type 2SC4278Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
2sa1634.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1634 DESCRIPTION With TO-220 package Complement to type 2SC4007 Low collector saturation voltage APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy
2sa1635.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1635 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SC4008 APPLICATIONS For medium speed,electrical supply and DC-DC converter applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
2sa1634.pdf
isc Silicon PNP Power Transistor 2SA1634DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
2sa1635.pdf
isc Silicon PNP Power Transistor 2SA1635DESCRIPTIONLow Collector Saturation Voltage: V = -1.5V(Max)@ I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SC4008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpos
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
