2SA1695 PDF and Equivalents Search

 

2SA1695 Specs and Replacement

Type Designator: 2SA1695

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3P

 2SA1695 Substitution

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2SA1695 datasheet

 ..1. Size:183K  jmnic

2sa1695.pdf pdf_icon

2SA1695

JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒

 ..2. Size:28K  sanken-ele

2sa1695.pdf pdf_icon

2SA1695

2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 VCBO 140 V ICBO VCB= 140V 10max A 0.1 9.6 2.0 VCEO 140 V IEBO VEB= 6V... See More ⇒

 ..3. Size:103K  inchange semiconductor

2sa1695.pdf pdf_icon

2SA1695

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 ... See More ⇒

 8.1. Size:72K  sanyo

2sa1699.pdf pdf_icon

2SA1695

Ordering number EN2973 PNP Epitaxial Planar Silicon Transistors 2SA1699 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2003A Excellent hFE linearity. [2SA1699] JEDEC TO-92 B Base EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter ... See More ⇒

Detailed specifications: 2SA1693 , 2SA1693O , 2SA1693P , 2SA1693Y , 2SA1694 , 2SA1694O , 2SA1694P , 2SA1694Y , TIP127 , 2SA1695O , 2SA1695P , 2SA1695Y , 2SA1696 , 2SA1697 , 2SA1698 , 2SA1699 , 2SA17 .

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