2SA1695O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1695O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3P
2SA1695O Transistor Equivalent Substitute - Cross-Reference Search
2SA1695O Datasheet (PDF)
2sa1695.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1695 DESCRIPTION With TO-3PN package Complement to type 2SC4468 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1695.pdf
2SA1695Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.6VCBO 140 V ICBO VCB=140V 10max A0.19.6 2.0VCEO 140 V IEBO VEB=6V
2sa1695.pdf
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) Good Linearity of hFE Complement to Type 2SC4468 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -140
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
