2SA1700 PDF and Equivalents Search

 

2SA1700 Specs and Replacement

Type Designator: 2SA1700

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO202

 2SA1700 Substitution

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2SA1700 datasheet

 ..1. Size:76K  sanyo

2sa1700.pdf pdf_icon

2SA1700

Ordering number EN2974A PNP Epitaxial Planar Silicon Transistor 2SA1700 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collecto... See More ⇒

 ..2. Size:156K  utc

2sa1700.pdf pdf_icon

2SA1700

UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T TO-251 B C E Tube 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R TO-252 B C E Tape Ree... See More ⇒

 ..3. Size:205K  lge

2sa1700.pdf pdf_icon

2SA1700

2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Coll... See More ⇒

 ..4. Size:236K  inchange semiconductor

2sa1700.pdf pdf_icon

2SA1700

isc Silicon PNP Power Transistor 2SA1700 DESCRIPTION High breakdown voltage Low Collector-Emitter Saturation Voltage High Power Dissipation- P = 10W@T =25 ,P = 10W@Ta=25 C C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

Detailed specifications: 2SA1695P , 2SA1695Y , 2SA1696 , 2SA1697 , 2SA1698 , 2SA1699 , 2SA17 , 2SA170 , A1013 , 2SA1701 , 2SA1702 , 2SA1703 , 2SA1704 , 2SA1705 , 2SA1706 , 2SA1707 , 2SA1708 .

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