2SA1712 Datasheet and Replacement

Ordering number:EN3097PNP/NPN Epitaxial Planar Silicon Transistors2SA1710/2SC4490High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Excellent high frequency characteristic.2064 Adoption of MBIT process.[2SA1710/2SC4490]E : EmitterC : CollectorB : Base( ) : 2SA1710SANYO : NMPSpec

DATA SHEETSILICON TRANSISTOR2SA1714PNP SILICON EPITAXIAL POWER TRANSISTOR(DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm)transistor is ideal for high-precision control such as PWM control forpulse mortors or blushless mortor of OA and FA equipment.FEATURES High DC current amplifiers due

JMnic Product Specification Silicon PNP Power Transistors 2SA1718 DESCRIPTION With TO-220F package High DC current gain. Low collector saturation voltage. DARLINGTON APPLICATIONS Ideal for motor drviers and solenoid drivers application PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings

isc Silicon PNP Power Transistor 2SA1718DESCRIPTIONLow Collector Saturation Voltage:V = -0.5(V)(Max)@I = -2ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo