2SA173 Datasheet. Specs and Replacement

Type Designator: 2SA173  📄📄 

SMD Transistor Code: 1E

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO5

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2SA173 datasheet

 0.1. Size:192K  toshiba

2sa1736.pdf pdf_icon

2SA173

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol... See More ⇒

 0.2. Size:150K  toshiba

2sa1735.pdf pdf_icon

2SA173

2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -500 mA) High speed switching time t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540 ... See More ⇒

 0.3. Size:183K  toshiba

2sa1734.pdf pdf_icon

2SA173

2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -700 mA) High speed switching time t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC... See More ⇒

 0.4. Size:97K  sanyo

2sa1730.pdf pdf_icon

2SA173

Ordering number EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions Adoption of FBET , MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1730] Fast switching speed. Small-sized package. E Emitter C Collector B Base SANYO PCP (Bottom vi... See More ⇒

Detailed specifications: 2SA1725, 2SA1725O, 2SA1725P, 2SA1725Y, 2SA1726, 2SA1727, 2SA1728, 2SA1729, TIP127, 2SA1730, 2SA1731, 2SA1732, 2SA1733, 2SA1733K, 2SA1734, 2SA1735, 2SA1736

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