2SA1733K PDF and Equivalents Search

 

2SA1733K Specs and Replacement

Type Designator: 2SA1733K

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 170 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO236

 2SA1733K Substitution

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2SA1733K datasheet

 8.1. Size:192K  toshiba

2sa1736.pdf pdf_icon

2SA1733K

2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1.5 A) High speed switching time tstg = 0.2 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Absol... See More ⇒

 8.2. Size:150K  toshiba

2sa1735.pdf pdf_icon

2SA1733K

2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -500 mA) High speed switching time t = 0.25 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4540 ... See More ⇒

 8.3. Size:183K  toshiba

2sa1734.pdf pdf_icon

2SA1733K

2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type (PCT process) 2SA1734 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -700 mA) High speed switching time t = 0.2 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC... See More ⇒

 8.4. Size:97K  sanyo

2sa1730.pdf pdf_icon

2SA1733K

Ordering number EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions Adoption of FBET , MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1730] Fast switching speed. Small-sized package. E Emitter C Collector B Base SANYO PCP (Bottom vi... See More ⇒

Detailed specifications: 2SA1727 , 2SA1728 , 2SA1729 , 2SA173 , 2SA1730 , 2SA1731 , 2SA1732 , 2SA1733 , BD136 , 2SA1734 , 2SA1735 , 2SA1736 , 2SA1737 , 2SA1738 , 2SA1739 , 2SA174 , 2SA1740 .

History: 2SA922-1 | KTB688

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