All Transistors. 2SA1760 Datasheet

 

2SA1760 Datasheet and Replacement


   Type Designator: 2SA1760
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 12 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
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2SA1760 Datasheet (PDF)

 8.1. Size:189K  toshiba
2sa1761.pdf pdf_icon

2SA1760

 8.2. Size:87K  sanyo
2sa1766.pdf pdf_icon

2SA1760

Ordering number:EN3182BPNP Epitaxial Planar Silicon Transistor2SA1766High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High DC current gain (hFE=500 to 1200).2038 Large current capacity.[2SA1766] Low collector-to-emitter saturation voltage. High VEBO.E : EmitterC : Collec

 8.3. Size:106K  sanyo
2sa1768.pdf pdf_icon

2SA1760

Ordering number:ENN3582PNP/NPN Epitaxial Planar Silicon Transistors2SA1768/2SC4612High-Voltage Switching ApplicationsApplicaitons Package Dimensions Color TV sound output, converter, inverter. unit:mm2064AFeatures [2SA1768/2SC4612]2.5 Adoption of MBIT process.1.45 High breakdown voltage, large current capacity.6.9 1.0 Fast switching speed.0.60.9 0.51

 8.4. Size:131K  sanyo
2sa1769 2sc4613.pdf pdf_icon

2SA1760

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3915

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