2SA1803O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1803O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 290 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: ISO247
2SA1803O Transistor Equivalent Substitute - Cross-Reference Search
2SA1803O Datasheet (PDF)
7.1. 2sa1803.pdf 
Size:178K _toshiba
7.2. 2sa1803.pdf Size:263K _jmnic
JMnic Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION · ·With TO-3PFM package ·Complement to type 2SC4688 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute
8.1. 2sa1802.pdf Size:89K _toshiba
2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • Excellent hFE linearity : h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C : h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C • Low collector saturation voltage : V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B • C
8.2. 2sa1805.pdf Size:176K _toshiba
8.3. 2sa1804.pdf Size:177K _toshiba
8.4. 2sa1801.pdf Size:122K _toshiba
8.5. 2sa1807 2sa1862.pdf Size:56K _rohm
2SA1807 Transistors Transistors 2SA1862 (96-102-A331) (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
8.6. 2sa1807.pdf Size:43K _rohm
2SA1807 Transistors Transistors 2SA1862 (96-102-A331) (96-109-A343) 307
8.7. 2sa1806.pdf Size:40K _panasonic
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6± 0.15 0.4 0.8± 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25˚C) Pa
8.8. 2sa1806 e.pdf Size:44K _panasonic
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6± 0.15 0.4 0.8± 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25˚C) Pa
8.9. 2sa1805.pdf Size:211K _jmnic
JMnic Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION · ·With TO-3PFM package ·Complement to type 2SC4690 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute
8.10. 2sa1804.pdf Size:243K _jmnic
JMnic Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION · ·With TO-3PFM package ·Complement to type 2SC4689 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute ma
Datasheet: 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y , 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2N222 , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 .
