2SA1822 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1822
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
2SA1822 Transistor Equivalent Substitute - Cross-Reference Search
2SA1822 Datasheet (PDF)
2sa1822.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1822DESCRIPTIONHigh Collector-Emitter Breakdown VoltageExcellent switching time100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applications.High speed DC-DC converter applicationABSOLUTE MAXIMUM RATINGS(T =25)a
2sa1823.pdf
Ordering number:EN3870PNP Epitaxial Planar Silicon Transistor2SA182320V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm Low saturation voltage.2084 Fast swicthing speed.[2SA1823] Large current capacity. It is possible to make appliances more compactbecause its height on board is 9.5mm. Meets radial taping.E
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
