All Transistors. 2SA183 Datasheet

 

2SA183 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA183

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 75 °C

Transition Frequency (ft): 7 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO1

2SA183 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA183 Datasheet (PDF)

1.1. 2sa1832-y.pdf Size:182K _update

2SA183
2SA183

MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Small Package Epitaxial Transistor • Mounting:any position • Epoxy meets UL 94 V-

1.2. 2sa1837af.pdf Size:171K _update

2SA183
2SA183

RoHS RoHS 2SA1837AF SEMICONDUCTOR Nell High Power Products High Frequency PNP Power Transistor -1A/-230V/20W FEATURES High transition frequency: fT = 70MHz (typ.) Complementary to 2SC4793AF B C TO-220F package which can be E installed to the heat sink with one screw TO-220F (2SA1837AF) APPLICATIONS Power amplifier (2) C Driver stage amplifier B (1) PNP E(3) ABSO

 1.3. 2sa1832-gr.pdf Size:182K _update

2SA183
2SA183

MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) • Small Package Epitaxial Transistor • Mounting:any position • Epoxy meets UL 94 V-

1.4. 2sa1832.pdf Size:202K _toshiba

2SA183
2SA183

2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) • Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Complementary to 2SC4738 • Small package Absolute Maximum

 1.5. 2sa1832f.pdf Size:231K _toshiba

2SA183
2SA183

2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = -50 V, IC = -150 mA (max) • Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) • High hFE: hFE = 120~400 • Complementary to 2SC4738F • Small package Ma

1.6. 2sa1837.pdf Size:116K _toshiba

2SA183
2SA183

2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Collector-emitter voltage VCEO -230 V Emitter-base vo

1.7. 2sa1832ft.pdf Size:153K _toshiba

2SA183
2SA183

2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = -50 V • High current: I = -150 mA (max) C • High h : h = 120 to 400 FE FE • Excellent h linearity FE : h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C • Complementary to 2SC4738F Maximum

1.8. 2sa1839.pdf Size:87K _sanyo

2SA183
2SA183

Ordering number:EN4666 PNP Epitaxial Planar Silicon Transistor 2SA1839 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1839- unit:mm applied sets to be made small and slim. 2018B Small output capacitance. [2SA1839] Low collector-to-emitter saturation voltage. Low ON resistance. 1 : Base 2 :Emitter 3 : Collector SANYO : CP

1.9. 2sa1838.pdf Size:87K _sanyo

2SA183
2SA183

Ordering number:EN4665 PNP Epitaxial Planar Silicon Transistor 2SA1838 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1838- unit:mm applied sets to be made small and slim. 2059A Small output capacitance. [2SA1838] Low collector-to-emitter saturation voltage. Low ON resistance. 1 : Base 2 : Emitter 3 : Collector SANYO : MCP

1.10. 2sa1830.pdf Size:127K _sanyo

2SA183
2SA183

1.11. 2sa1831.pdf Size:91K _sanyo

2SA183
2SA183

Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=800V). unit:mm Small Cob (Cob typ=1.6pF). 2010B High reliabirity (Adoption of HVP processes). [2SA1831] JEDEC : TO-220AB E : Emitter EIAJ : SC-46 C : Collector B : Base Specifi

1.12. 2sa1836.pdf Size:187K _nec

2SA183
2SA183

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.3 +0.1 0.15+0.1 0 0.05 FEATURES High DC current gain: hFE2 = 200 TYP. 3 0 to 0.1 High voltage: VCEO = -50 V Can be automatically mounted 2 1 0.2+0.1 0 ORDERING INFORMATION 0.6 0.5 0.5 0.75

1.13. 2sa1834 2sc5001.pdf Size:50K _rohm

2SA183
2SA183

2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only.

1.14. 2sa1834.pdf Size:74K _rohm

2SA183
2SA183

2SA1834 Transistors Low VCE(sat) Transistor (Strobe flash) (-20V, -10A) 2SA1834 External dimentions (Unit : mm) Features 1) Low saturation voltage, CPT3 6.5 5.1 typically VCE(sat) = -0.16V at IC / IB= -4A / -50mA. 2.3 0.5 2) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SC5001. 0.75 Packaging specification

1.15. 2sa1837.pdf Size:175K _utc

2SA183
2SA183

UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS ? FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 2SA1837L-TF3-T 2SA1837G-TF3-T TO-220F B C E Tube 2SA18

1.16. 2sa1832.pdf Size:471K _secos

2SA183
2SA183

2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES ? High Voltage and High Current A ? Excellent hFE Linearity M ? Complementary to 2SC4738 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 Product-Rank 2SA1832-Y 2SA1832-GR K E Range 12

1.17. 2sa1837.pdf Size:190K _jmnic

2SA183
2SA183

JMnic Product Specification Silicon PNP Power Transistors 2SA1837 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4793 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?)

1.18. 2sa1837.pdf Size:86K _inchange_semiconductor

2SA183
2SA183

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VC

1.19. 2sa1832.pdf Size:769K _wietron

2SA183
2SA183

2SA1832 PNP TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES: * High voltage and high current * Excellent hFE linearity SOT-523(SC-75) * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25? unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous -150

1.20. 2sa1832.pdf Size:946K _kexin

2SA183
2SA183

SMD Type Transistors PNP Transistors 2SA1832 SOT-523 U nit: m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15±0.05 2 1 ■ Features ● High voltage and high current ● Excellent hFE linearity 3 ● Complementary to 2SC4738 0.3±0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector -

1.21. 2sa1839.pdf Size:1058K _kexin

2SA183
2SA183

SMD Type Transistors PNP Transistors 2SA1839 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Small output capacitance. ● Low collector-to-emitter saturation voltage. ● Low ON resistance. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base V

1.22. 2sa1837.pdf Size:414K _kexin

2SA183
2SA183

DIP Type Transistors Transistors PNP Transistors 2SA1837 TO-220MF 单位Units:mm ■ Features ●High collector voltage:VCEO=-230V (min) ●Complementary to 2SC4793 ●High transition frequency :fT=70MHz(Typ.) ●RoHS product ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -230 Collector - Emitter Voltage VCEO -230 V Emit

Datasheet: 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , S9012 , 2SA1832 , 2SA1837 , 2SA184 , 2SA1856 , 2SA1857 , 2SA1857-3 , 2SA1857-4 , 2SA1857-5 .

 

 
Back to Top