2SA183 datasheet, аналоги, основные параметры
Наименование производителя: 2SA183 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.05 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.01 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 7 MHz
Ёмкость коллекторного перехода (Cc): 15 pf
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO1
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Аналоги (замена) для 2SA183
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2SA183 даташит
0.1. Size:153K toshiba
2sa1832ft.pdf 
2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -50 V High current I = -150 mA (max) C High h h = 120 to 400 FE FE Excellent h linearity FE h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C Complementary to 2SC4738F Maximum
0.2. Size:202K toshiba
2sa1832.pdf 
2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Complementary to 2SC4738 Small package Absolute Maximum
0.3. Size:231K toshiba
2sa1832f.pdf 
2SA1832F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832F Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SC4738F Small package Ma
0.4. Size:202K toshiba
2sa1832o 2sa1832y 2sa1832gr.pdf 
2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Complementary to 2SC4738 Small package Absolute Maximum
0.5. Size:135K toshiba
2sa1837.pdf 
2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 70 MHz (typ.) Complementary to 2SC4793 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Collector-emitter voltage VCEO -230 V Emitter-base vo
0.6. Size:87K sanyo
2sa1838.pdf 
Ordering number EN4665 PNP Epitaxial Planar Silicon Transistor 2SA1838 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1838- unit mm applied sets to be made small and slim. 2059A Small output capacitance. [2SA1838] Low collector-to-emitter saturation voltage. Low ON resistance. 1 Base 2 Emitter 3 Collector SANY
0.7. Size:87K sanyo
2sa1839.pdf 
Ordering number EN4666 PNP Epitaxial Planar Silicon Transistor 2SA1839 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1839- unit mm applied sets to be made small and slim. 2018B Small output capacitance. [2SA1839] Low collector-to-emitter saturation voltage. Low ON resistance. 1 Base 2 Emitter 3 Collector SANYO
0.9. Size:91K sanyo
2sa1831.pdf 
Ordering number EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min= 800V). unit mm Small Cob (Cob typ=1.6pF). 2010B High reliabirity (Adoption of HVP processes). [2SA1831] JEDEC TO-220AB E Emitter EIAJ SC-46 C Collector B Base
0.10. Size:187K nec
2sa1836.pdf 
DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SA1836 is PNP silicon epitaxial transistor. 0.3 +0.1 0.15+0.1 0 0.05 FEATURES High DC current gain hFE2 = 200 TYP. 3 0 to 0.1 High voltage VCEO = -50 V Can be automatically mounted 2 1 0.2+0.1 0 ORDERING INFORMATION 0.6
0.11. Size:50K rohm
2sa1834 2sc5001.pdf 
2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
0.12. Size:74K rohm
2sa1834.pdf 
2SA1834 Transistors Low VCE(sat) Transistor (Strobe flash) (-20V, -10A) 2SA1834 External dimentions (Unit mm) Features 1) Low saturation voltage, CPT3 6.5 5.1 typically VCE(sat) = -0.16V at IC / IB= -4A / -50mA. 2.3 0.5 2) High current capacity, typically IC= 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SC5001. 0.75 Packaging specif
0.13. Size:182K mcc
2sa1832-gr.pdf 
MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meets UL 94 V-
0.14. Size:182K mcc
2sa1832-y.pdf 
MCC 2SA1832-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1832-GR CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meets UL 94 V-
0.15. Size:175K utc
2sa1837.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 2SA1837L-TF3-T 2SA1837G-TF3-T TO-220F B C E Tube
0.16. Size:471K secos
2sa1832.pdf 
2SA1832 -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High Voltage and High Current A Excellent hFE Linearity M Complementary to 2SC4738 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 Product-Rank 2SA1832-Y 2SA1832-GR K E
0.17. Size:190K jmnic
2sa1837.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1837 DESCRIPTION With TO-220F package Complement to type 2SC4793 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25
0.18. Size:769K wietron
2sa1832.pdf 
2SA1832 PNP TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES * High voltage and high current * Excellent hFE linearity SOT-523(SC-75) * Complementary to 2SC4738 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current Continuous
0.19. Size:875K jilin sino
2sa1837.pdf 
PNP PNP Epitaxial Silicon Transistor R 2SA1837 APPLICATIONS Power Amplifier Applications FEATURES V =-230V (min) High collector voltage V =-230V (min) CEO CEO 2SC4793 Complementary to 2SC4793 High transition frequency fT=70MHz(Typ.) f T=70MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Marking Ha
0.20. Size:171K nell
2sa1837af.pdf 
RoHS RoHS 2SA1837AF SEMICONDUCTOR Nell High Power Products High Frequency PNP Power Transistor -1A/-230V/20W FEATURES High transition frequency fT = 70MHz (typ.) Complementary to 2SC4793AF B C TO-220F package which can be E installed to the heat sink with one screw TO-220F (2SA1837AF) APPLICATIONS Power amplifier (2) C Driver stage amplifier B (1) PNP E(3) ABSO
0.21. Size:946K kexin
2sa1832.pdf 
SMD Type Transistors PNP Transistors 2SA1832 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features High voltage and high current Excellent hFE linearity 3 Complementary to 2SC4738 0.3 0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -
0.22. Size:1058K kexin
2sa1839.pdf 
SMD Type Transistors PNP Transistors 2SA1839 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 Features 3 Small output capacitance. Low collector-to-emitter saturation voltage. Low ON resistance. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V
0.23. Size:414K kexin
2sa1837.pdf 
DIP Type Transistors Transistors PNP Transistors 2SA1837 TO-220MF Units mm Features High collector voltage VCEO=-230V (min) Complementary to 2SC4793 High transition frequency fT=70MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -230 Collector - Emitter Voltage VCEO -230 V Emit
0.24. Size:936K jsmsemi
2sa1837.pdf 
2SA1837 PNP PNP Epitaxial Silicon Transistor APPLICATIONS Power Amplifier Applications FEATURES VCEO=-230V (min) High collector voltage VCEO=-230V (min) 2SC4793 Complementa
0.25. Size:834K cn evvo
2sa1837.pdf 
Silicon PNP transistor Power Amplifier Applications Complementary to 2SC4793 High collector voltage VCEO=-230V (min) Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati
0.26. Size:94K cn minos
2sa1837.pdf 
2SA1837 Minos Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Complementaryto 2SC4793 Highcollector voltage VCEO=-230V (min) Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis product todecrease inthe reliability significantly even if the operating conditions (i.e
0.27. Size:192K inchange semiconductor
2sa1837.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO High Current-Gain Bandwidth Product Complement to Type 2SC4793 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications ABSOLUTE
Другие транзисторы: 2SA1810C, 2SA1811, 2SA1815, 2SA1815-3, 2SA1815-4, 2SA1815-5, 2SA182, 2SA1822, 9014, 2SA1832, 2SA1837, 2SA184, 2SA1856, 2SA1857, 2SA1857-3, 2SA1857-4, 2SA1857-5
