2SA1889 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1889
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO126FM
2SA1889 Transistor Equivalent Substitute - Cross-Reference Search
2SA1889 Datasheet (PDF)
2sa1887.pdf
2SA1887 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) at IC = -5 A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -7 VColle
2sa1883.pdf
Ordering number:4660APNP Epitaxial Planar Silicon Transistor2SA1883High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturatio voltage.2106A High gain-bandwidth product.[2SA1883] Small collector capacitance. Very small-sized package permitting 2SA1883-applied sets to be made small and slim. Compl
2sa1887.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1887 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -80 V VCEO Coll
2sa1880.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1880 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
2sa1880.pdf
SHINDENGENSwitching Power TransistorHSV SeriesOUTLINE DIMENSIONS2SA1880 Case : ITO-220Unit : mm(TP10T8)-10A PNPRATINGS
2sa1881.pdf
SMD Type TransistorsPNP Transistors2SA1881SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=-1A1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 Complementary to 2SC49831.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
2sa1882.pdf
SMD Type TransistorsPNP Transistors2SA1882SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-15V Complementary to 2SC49840.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCE
2sa1887.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1887DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VC
2sa1880.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1880DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -5ACE(sat) CLarge Current Capability-I = -10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
