2SA193 Datasheet. Specs and Replacement
Type Designator: 2SA193 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 80 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO1
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2SA193 datasheet
0.2. Size:194K toshiba
2sa1937.pdf 
2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit mm High voltage VCEO = -600 V Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB... See More ⇒
0.3. Size:126K toshiba
2sa1931.pdf
2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit mm Low saturation voltage VCE (sat) = -0.4 V (max) High-speed switching time tstg = 1.0 s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitt... See More ⇒
0.4. Size:119K toshiba
2sa1930.pdf
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -180 V Emitter-base v... See More ⇒
0.8. Size:24K wingshing
2sa1939.pdf
2SA1939 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196 ABSOLUTE MAXIMUM RATING (Ta=25 c c) c c Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collec... See More ⇒
0.9. Size:231K jmnic
2sa1939.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbo... See More ⇒
0.10. Size:482K blue-rocket-elect
2sa1930i.pdf
2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features 2SC5171I(BR3DA5171I) High fT, complementary pair with 2SC5171I(BR3DA5171I). / Applications General power and d... See More ⇒
0.11. Size:239K foshan
2sa1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features High f , complementary pair with 2SC5171S(3DA5171S). T /Absolute maximum ratings(Ta=25 ) ... See More ⇒
0.12. Size:312K lzg
2sa1930 3ca1930.pdf
2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171(3DA5171) Features High f , complementary pair with 2SC5171(3DA5171). T /Absolute maximum ratings(Ta=25 ) Sym... See More ⇒
0.13. Size:248K lzg
2sa1930s 3ca1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features High f , complementary pair with 2SC5171S(3DA5171S). T /Absolute maximum ratings(Ta=25 ) ... See More ⇒
0.14. Size:252K lzg
2sa1930i 3ca1930i.pdf
2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR Purpose General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features High f , complementary pair with 2SC5171I(3DA5171I). T /Absolute maximum ratings(Ta=25 ) ... See More ⇒
0.15. Size:197K inchange semiconductor
2sa1931.pdf
isc Silicon PNP Power Transistor 2SA1931 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC3299 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
0.16. Size:181K inchange semiconductor
2sa1932.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1932 DESCRIPTION High collector breakdown voltage Complementary to 2SC5174 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
0.17. Size:221K inchange semiconductor
2sa1939.pdf
isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC5196 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage app... See More ⇒
Detailed specifications: 2SA18H, 2SA19, 2SA190, 2SA1907, 2SA1908, 2SA1909, 2SA191, 2SA192, BC547B, 2SA194, 2SA195, 2SA1958, 2SA196, 2SA1967, 2SA1968, 2SA197, 2SA198
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