All Transistors. 2SA1967 Datasheet

 

2SA1967 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1967

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.75 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 900 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 2.2 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220AB

2SA1967 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1967 Datasheet (PDF)

1.1. 2sa1967.pdf Size:90K _sanyo

2SA1967
2SA1967

Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit:mm Small Cob (Cob typ=2.2pF). 2010C High reliability (Adoption of HVP process). [2SA1967] JEDEC : TO-220AB 1 : Base EIAJ : SC46 2 : Collector Specifications 3 : Emitte

4.1. 2sa1964 3ca1964.pdf Size:179K _update

2SA1967
2SA1967

2SA1964(3CA1964) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于高电压开关(音频输出放大,提供稳定的电压)。 Purpose: High-voltage switching(audio output amplifier transistor, stabilized power supply transistor). 特点:h 线性好,击穿电压高,f 高,宽阔的安全工作区,与 2SC5248(3DA5248)互补。 T FE Features: Flat DC curren

4.2. 2sa1962.pdf Size:129K _toshiba

2SA1967
2SA1967

2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Collector-emitt

4.3. 2sa1969.pdf Size:137K _sanyo

2SA1967
2SA1967

Ordering number:5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,Medium- Current Ultrahigh-Speed Switching Applications Features Package Dimensions High fT (fT=1.7GHz typ). unit:mm Large current capacity (IC=400mA). 2038A [2SA1969] 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings

4.4. 2sa1963.pdf Size:159K _sanyo

2SA1967
2SA1967

Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions Low noise : NF=1.5dB typ (f=1GHz). unit:mm High gain : | S2le |2=9dB typ (f=1GHz). 2018B High cutoff frequency : fT=5GHz typ. [2SA1963] 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : CP Absolu

4.5. 2sa1968.pdf Size:91K _sanyo

2SA1967
2SA1967

Ordering number:5183 NPN Triple Diffused Planar Silicon Transistor 2SA1968 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit:mm Small Cob (Cob typ=2.2pF). 2079B High reliability (Adoption of HVP process). [2SA1968] Package of full isolation type. 1 : Base 2 : Collector 3 : Emitter SANYO

4.6. 2sa1968ls.pdf Size:30K _sanyo

2SA1967
2SA1967

Ordering number : ENN5183B 2SA1968LS PNP Triple Diffused Planar Silicon Transistor 2SA1968LS High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=--900V). unit : mm Small Cob(Cob typ=2.2pF). 2079D High reliability(Adoption of HVP process). [2SA1968LS] Package of full isolation type. 10.0 4.5 3.2 2.8 0.9

4.7. 2sa1965.pdf Size:85K _sanyo

2SA1967
2SA1967

Ordering number:5031 PNP Epitaxial Planar Silicon Transistor 2SA1965 Muting Circuit Applications Features Package Dimensions Very small-sized package permitting 2SA1965- unit:mm applied sets to be made small and slim. 2106A Small output capacitance. [2SA1965] Low collectot-to-emitter saturation voltage. Small ON resistance. 1 : Base 2 : Emitter 3 : Collector SANYO : SMC

4.8. 2sa1962 fja4213.pdf Size:478K _fairchild_semi

2SA1967
2SA1967

January 2009 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17A TO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excellent Gain Linearity

4.9. 2sa1964 2sc5248.pdf Size:38K _rohm

2SA1967

2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282

4.10. 2sa1964.pdf Size:38K _rohm

2SA1967

2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282

4.11. 2sa1964 1-2.pdf Size:58K _rohm

2SA1967
2SA1967

4.12. 2sa1961.pdf Size:37K _panasonic

2SA1967
2SA1967

Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC5419 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. 0.65 max. Absolute Maximum Ratings (Ta=25?C) +0.1 0.450.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 200 V 1 2 3 Collector to emi

4.13. 2sa1961 e.pdf Size:41K _panasonic

2SA1967
2SA1967

Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC5419 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. 0.65 max. Absolute Maximum Ratings (Ta=25?C) +0.1 0.450.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 200 V 1 2 3 Collector to emi

4.14. 2sa1960.pdf Size:29K _hitachi

2SA1967
2SA1967

2SA1960 Silicon NPN Epitaxial ADE-208-392 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.3 GHz Small output capacitance. Cob = 2.9 pF 2SA1960 Ou

4.15. 2sa1962.pdf Size:231K _jmnic

2SA1967
2SA1967

JMnic Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION · ·With TO-3P(I) package ·Complement to type 2SC5242 ·High collector voltage: VCEO=-230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 s

4.16. 2sa1962.pdf Size:107K _inchange_semiconductor

2SA1967
2SA1967

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=

Datasheet: 2SA1909 , 2SA191 , 2SA192 , 2SA193 , 2SA194 , 2SA195 , 2SA1958 , 2SA196 , AC127 , 2SA1968 , 2SA197 , 2SA198 , 2SA199 , 2SA20 , 2SA200 , 2SA201 , 2SA202 .

 


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