2SA20 Datasheet and Replacement

2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Maximum Ratings (Ta = 25C) Characteristics Symb

2SA2034 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2034 High-Voltage Switching Applications Unit: mm High voltage : VCBO = -400 V High speed : tf = 0.3 s (max) (IC = -1.0 A) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -400 VCollector-emitter voltage VCEO -400 VEmitter-base voltage VEBO -7 VDC IC -2

2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = 0.5 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristi

2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.2 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.1 A) C Low collector-emitter saturation voltage: V = -0.20 V (max) CE (sat) High-speed switching: t = 70 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri

2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni

2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris

2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.5 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) fMaximum Ratings (Ta = 25C) Characterist

2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) High-speed switching: t = 37 ns (typ.) fMaximum Ratings (Ta = 25C) Characteris

2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications Unit: mmDC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.27 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitColle

Ordering number : EN7331A2SA2099 / 2SC5888SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.S

Ordering number : ENN6913A2SA2040 / 2SC5707PNP / NPN Epitaxial Planar Silicon Transistors2SA2040 / 2SC5707High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN6309B2SA2016 / 2SC5569PNP / NPN Epitaxial Planar Silicon Transistors2SA2016 / 2SC5569DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

Ordering number:ENN6367PNP/NPN Epitaxial Planar Silicon Transistors2SA2022/2SC5610DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2041AFeatures [2SA2022/2SC5610]4.5 Adoption of MBIT processes.10.02.8 Large current capacitance.3.2 Low collector-to-emitter saturation voltage. High-

Ordering number : ENN74952SA2098 / 2SC5887PNP / NPN Epitaxial Planar Silicon Transistors2SA2098 / 2SC5887High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2098 / 2SC5887]4.5 Adoption of MBIT processes. 10.02.8 Large current capacitance.3.2 Low collector-to-emitter satu

Ordering number : ENN69152SA2044 / 2SC5710PNP / NPN Epitaxial Planar Silicon Transistors2SA2044 / 2SC5710DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2044 / 2SC5710]Features6.5 Adoption of FBET and MBIT processes.2.35.00.54 Large current capacitance. Low collecto

Ordering number : ENN69142SA2043 / 2SC5709PNP / NPN Epitaxial Planar Silicon Transistors2SA2043 / 2SC5709DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2043 / 2SC5709]Features6.5 Adoption of FBET and MBIT processes. 2.35.00.54 Large current capacitance. Low collector

Ordering number : ENN65862SA2031 / 2SC5669PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2031 / 2SC5669230V / 15A, AF100W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2031 / 2SC5669]15.63.24.814.0

Ordering number : ENN69132SA2040/2SC5707PNP / NPN Epitaxial Planar Silicon Transistors2SA2040 / 2SC5707High Current Switching ApplicationsApplications Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045B[2SA2040 / 2SC5707]Features6.52.35.00.5 Adoption of FBET, MBIT process.4 Large current capacitance.

Ordering number : ENN69882SA2063 / 2SC5775PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2063 / 2SC5775160V / 12A, AF90W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2063 / 2SC5775]15.63.24.814.02

Ordering number : ENN69872SA2062 / 2SC5774PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2062 / 2SC5774140V / 10A, AF 70W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2062 / 2SC5774]15.63.24.814.0

Ordering number:ENN6309APNP/NPN Epitaxial Planar Silicon Transistors2SA2016/2SC5569DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2016/2SC5569]4.5 Adoption of FBET and MBIT processes.1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High

Ordering number:ENN6305PNP/NPN Epitaxial Planar Silicon Transistors2SA2011/2SC5564DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2011/2SC5564]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

Ordering number:ENN6307APNP/NPN Epitaxial Planar Silicon Transistors2SA2013/2SC5566DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2013/2SC5566]4.5 Adoption of FBET and MBIT processes.1.51.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi

Ordering number : EN6306A2SA2012 / 2SC5565SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2012 / 2SC5565DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, strobes.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized

Ordering number:ENN6404PNP Epitaxial Planar Silicon Transistor2SA2025DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2033AFeatures [2SA2025]2.24.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage.0.40.5 High-speed switching.

Ordering number:ENN6321PNP/NPN Epitaxial Planar Silicon Transistors2SA2014/2SC5567DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2014/2SC5567]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

Ordering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2SC5694DC / DC Converter ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers andunit : mmprinter drivers.2042B8.0[2SA2037 / 2SC5694]4.03.31.0 1.0Features Adoption of MBIT process. Large current capacity.3.0 Low co

2SA2039/2SC5706Ordering number : EN6912CSANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon Transistor2SA2039/2SC5706 High-Current SwitchingApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage

Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54

Ordering number:ENN6336PNP/NPN Epitaxial Planar Silicon Transistors2SA2023/2SC561160V / 5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2165 Inverters, converters (strobes, flash, fluorescent lamp[2SA2023/2SC5611]lighting circuit).8.04.0 Power amplifier (high-power car stereo,

Ordering number : ENN6307B2SA2013 / 2SC5566PNP / NPN Epitaxial Planar Silicon Transistors2SA2013 / 2SC5566DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

Ordering number:ENN6308PNP/NPN Epitaxial Planar Silicon Transistors2SA2015/2SC5568DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2015/2SC5568]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SA2007TransistorsHigh-speed Switching Transistor (-60V,-12A)2SA2007 External dimensions (Units : mm) Features1) High switching speed.10.0 4.5(Typ. tf = 0.15s at Ic = -6A)3.2 2.8 2) Low saturation voltage.(Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A)3) Wide SOA. (safe operating area)1.21.34) Complements the 2SC5526.0.8( )(1) Base Gate0.752.54 2.5

2SA2005TransistorsHigh-voltage Switching(Audio output amplifier transistor,TV velocity modulation transistor)(-160V, -1.5A)2SA2005 Features External dimensions (Units : mm)1) Flat DC current gain characteristics.2) High breakdown voltage. (BVCEO = -160V)10.0 4.53) High fT. (Typ. 150MHz)3.2 2.8 4) Wide SOA (safe operating area).5) Complements the 2SC5511.1.21.

1A / 60V Bipolar transistor 2SA2092 Features Dimensions (Unit : mm) 1) High speed switching. (tf : Typ. : 30ns at IC = 1A) TSMT32) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 1.0MAX2.93) Strong discharge resistance for inductive load and 0.850.4 0.7capacitance load. 4) Low switching noise. ( )3Applications ( ) ( )1 2

2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10

2SA2093 Transistors Power transistor (-60V, -2A) 2SA2093 External dimensions (Unit : mm) Features 1) High speed switching. ATV2.56.8(Tf : Typ. : 30ns at IC = -2A) 2) Low saturation voltage, typically :(Typ. -200mV at IC = -1.0A, IB = -0.1A) 0.65Max.3) Strong discharge power for inductive load and 0.5(1) (2) (3)capacitance load. 2.54 2.541.05 0.45(1) Emi

2SA2017TransistorsPower Transistor (-80V, -4A)2SA2017 Features1) Low VCE(sat). (Typ. 0.3V at IC/IB = -2 / -0.2A)2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).5) Complements the 2SC5574. Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage V

2SA2090 Transistors Medium power transistor (-60V, -0.5A) 2SA2090 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) 2.8TSMT31.62) Low saturation voltage, typically. (Typ. : -150mV at IC = -100mA, IB = -10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5868. (1) Base0.3 ~ 0.6

2SA2089S Transistors Medium power transistor (-60V, -0.5A) 2SA2089S External dimensions (Unit : mm) Features 1) High speed switching. SPT 4.0 2.0(Tf : Typ. : 60ns at IC = -500mA) (SC-72)2) Low saturation voltage, typically :(Typ. -150mV at IC = -100mA, IB = -10mA) 0.453) Strong discharge power for inductive load and 2.50.5 0.45capacitance load. 5.0(1) Emitt

General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime

High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2072 Features Dimensions (Unit : mm) 1) High speed switching. ( tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically. CPT3(SC-63):(Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC582

2SA2049 Transistor Medium power transistor (-30V, -2.0A) 2SA2049 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2.0A) 4.0MPT31.0 2.5 0.52) Low saturation voltage, typically (1) (Typ. : -250mV at IC = -1.0A, IB = -100mA) (2)3) Strong discharge power for inductive load and (3)capacitance load. 4) Complements the 2S

2SA2047 Transistor Medium power transistor (-30V, -0.5A) 2SA2047 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 40ns at IC = -500mA) UMT32) Low saturation voltage, typically (Typ. : -150mV at IC = -100A, IB = -100mA) 1.253) Strong discharge power for inductive load and 2.1capacitance load. 4) Complements the 2SC5729 (1)Emitter Ea

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576A / 2SA1037AKDatasheetGeneral Purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1) General Purpose. 2) Complementary:2SC5658/2SC4617EB2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AKDatasheetPNP -150mA -50V General Purpose TransistorsAEC-Q101 QualifiedOutline VMT3 EMT3FParameter ValueCollectorCollectorVCEO50VBaseBaseIC150mAEmitterEmitter2SA2029 2SA1774EB2SA2029FHA(SC-105AA) (SC-89)F

2SA2091S Transistors Medium power transistor (-60V, -1A) 2SA2091S External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = -1A) SPT 4.0 2.02) Low saturation voltage, typically (SC-72):(Typ. -200mV at IC = -0.5A, IB = -50mA) 3) Strong discharge power for inductive load and 0.45capacitance load. 2.50.5 0.454) Complements the 2SC

2SA2086S Transistors Medium power transistor (-30V, -1A) 2SA2086S External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1A) 4.0 2.0SPT2) Low saturation voltage, typically :(Typ. -150mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.45capacitance load. 2.50.5 0.454) Complements the 2SC5874S 5

2SA2029 / 2SA1774EB / 2SA17742SA1576UB / 2SA1576U3 / 2SA1037AKDatasheetGeneral purpose Transistor (-50V, -150mA)lOutlinelParameter Value SOT-723 SOT-416FLVCEO-50VIC-150mA 2SA2029 2SA1774EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/2SA1774 2SA1576UB 2SC4617/2SC

2SA2094Datasheet PNP -2A -60V Middle Power TransistorlOutlineTSMT3Parameter ValueCollector VCEO-60VBase IC-2AEmitter 2SA2094 lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SC58663) Low VCE(sat)VCE(sat)= -0.50V(Max.)(IC/IB= -1A / -0.1A)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMotor driver

AEC-Q101 QualifiedMedium power transistor (60V, 0.5A)2SA2088FRAFeatures Dimensions (Unit : mm)1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA)UMT32) Low saturation voltage, typically 150mV at IC = 100mA, IB = 10mA): (Typ. 2.0 0.93) Strong discharge power for inductive load and capacitance load. 0.3 0.2 0.74) Complements the 2SC5876 2S

2SA2073 Transistors High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = -3A) ATV2) Low saturation voltage, typically. :(Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements t

2SA2088DatasheetMedium power transistor (-60V, -0.5A)lOutlinelParameter Value UMT3VCEO-60VIC-0.5ASOT-323SC-70 lFeaturesl1)High speed switching.lInner circuitl (Tf:Typ.:60ns at IC=-500mA)2)Low saturation voltage, typically (Typ.:-150mV at IC=-100mA, IB=-10mA)3)Strong discharge pow

2SA2071DatasheetMiddle Power transistor (-60V, -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-60VIC-3AMPT3lFeatures lInner circuitl l1)High speed switching.2)Low saturation voltage. (Typ.:-200mV at IC=-2A, lB=-0.2A)3)Strong discharge power for inductive load and capacitance load.4)Complements the 2SC5824lA

2SA2048 Transistor Medium power transistor (-30V, -1.0A) 2SA2048 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -1.0A) 2.81.6TSMT32) Low saturation voltage, typically (Typ. : -150mV at IC = -500mA, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 (1)BaseEach l

2SA2087 Transistors Power transistor (-30V, -2A) 2SA2087 External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = -2A) ATV2.56.82) Low saturation voltage, typically :(Typ. -200mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.65Max.capacitance load. 0.5(1) (2) (3)4) Complements the 2SC5875 2

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6309D2SA2016/2SC5569Bipolar Transistorhttp://onsemi.com(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6306B2SA2012Bipolar Transistorhttp://onsemi.com ( )30V, 5A, Low VCE sat PNP Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT processes Large current capacity Low collector to emitter saturation voltage Ultrasmall-sized package permitting applied sets to be made small and slim

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium. Reduces Board Space High hFE, 210-460 (Typical)PNP GENERAL Low VCE(sat),

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

2SA2029M3PNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardwww.onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typical)

Ordering number : EN6307C2SA2013/2SC5566Bipolar Transistorhttp://onsemi.com(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

Transistors2SA2046Silicon PNP epitaxial planer typeUnit: mmFor DC-DC converter0.40+0.10-0.050.16+0.101.45 -0.063 Features Low collector to emitter saturation voltage VCE(sat) Mini3-G1 type package, allowing downsizing and thinning of the1 2equipment and automatic insertion through the tape packing0.95 0.951.900.202.90+0.20 Absolute Maximum Ratings Ta

Transistors2SA2010Silicon PNP epitaxial planer typeUnit: mmFor DC-DC converter0.40+0.100.050.16+0.100.06For various driver circuits3 Features1 2 Low collector to emitter saturation voltage VCE(sat) , large current(0.95) (0.95)capacitance1.90.1 High-speed switching2.90+0.200.05 Mini type 3-pin package, allowing downsizing and thinning o

Power Transistors2SA2064Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for audio & visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.40.22.60.11.60.2

Power Transistors2SA2004Silicon PNP epitaxial planar typeUnit: mm4.60.2For power amplification 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5 kV High-speed switching1.40.22.60.11.60.20.80.1 0.550.15

Transistors2SA2028Silicon PNP epitaxial planer typeUnit: mmFor DC-DC converter0.3+0.1 0.15+0.100.050.03 Features Large current capacitance Low collector to emitter saturation voltage1 2 High-speed switching(0.65) (0.65) Small type package, allowing downsizing and thinning of the1.30.1equipment.2.00.210 Absolute Maximum Ratings Ta =

Power Transistors2SA2075Silicon PNP epitaxial planar typeUnit: mmPower supply for Audio & Visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1C 1.0 High-speed switching (tstg: storage time/tf: fall time is short)1.480.22.250.2 Low collector-emitter saturation voltage VCE(sat)0.

Transistors2SA2077Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SC58450.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.95) (0.95)packing.1.90.12.90+0.

Power Transistors2SA2057Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for audio & visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat)1.40.22.60.1 Supe

Transistors2SA2009Silicon PNP epitaxial planar typeFor low-frequency high breakdown voltage amplificationUnit: mm0.15+0.100.3+0.10.050.0 Features3 High collector-emitter voltage (Base open) VCEO Low noise voltage NV S-Mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing. 1 2(0.65) (0.

Power Transistors2SA2067Silicon PNP epitaxial planar typeUnit: mmPower supply for audio & visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1 High speed switching (tstg: storage time/tf: fall time is short)C 1.01.480.2 Low collector-emitter saturation voltage VCE(sat)2.250.2

Transistors2SA2078Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SC5846 0.33+0.05 0.10+0.050.02 0.023 Features High forward current transfer ratio hFE0.23+0.05 1 20.02 SSS-Mini type package, allowing downsizing of the equipment(0.40)(0.40)and automatic insertion through the tape packing and the maga-0.800.05

Power Transistors2SA2074Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2

Transistors2SA2084Silicon PNP epitaxial planar typeUnit: mmFor general amplification0.40+0.100.050.16+0.100.063 Features High collector-emitter voltage (Base open) VCEO Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.95) (0.95) Absolute Maximum Ratings Ta = 25C1.90.12.90+0.20

Transistors2SA2021Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SC56093 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2

UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. ORDERING INFORMATION Order Number Pin Assignment Package Pa

2SA2018FPNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductFEATURESSOT-523High Collector CurrentDim Min MaxLow VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mAA 1.50 1.70B 0.78A 0.82C 0.80 0.82LMARKING CODED 0.28 0.32BW3G 0.90 1.10SBTop View2 1H 0.00 0.10J 0.10 0.20DK 0.35 0.41G3. Collector L 0.49 0

SMALL-SIGNAL TRANSISTOR2SA2027 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)DESCRIPTIONOUTLINE DRAWING Unit2SA2027 is a super mini package resin sealedsilicon PNP epitaxial transistor,FE rank 4.40.1 Lot No.It is designed for high voltage application.1.60.1.12.50.1FEATURESmall collector to emitte

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors2SA2029 General urpose ransistors (PNP)SOT-723 FEATURES Excellent hFE linearity Complements the 2SC56581. BASE 2. EMITTER3. COLLECTOR Marking: FQ FR FS Absolute maximum ratings (Ta=25) Symbol Parameter Limit UnitVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta

JMnic Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION With TO-3PN package Complement to type 2SC5669 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

2SA2018SOT-523 Transistor(PNP)1. BASE SOT-5232. EMITTER 3. COLLECTOR Features A collector current is large. Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA MARKING: BW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12

2SA2018PNP Genera Purpose Transistors3P b Lead(Pb)-Free12 FEATURES:SOT-523(SC-75)* A collector current is large. * Low VCE(sat). VCE(sat)-250mV @ IC = -200mA / IB = -10mA MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol ValueUnitsCollector- Base Voltage VCBO -15 V-12 VCollector-Emitter Voltage VCEOEmitter-Base Voltage VEBO -6 VCollector Cur

2SA2050(BR3CA2050F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV

ST 2SA200 PNP Silicon Epitaxial Planar Transistor for general purpose and switching amplifier The transistor is subdivided into two group, O and Y according to its DC current gain. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit60 VCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO

ST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 ACollector Current (Pw = 100 ms) -ICP 6 A0.5 PC W Collector Power Dissipation2 1

ST 2SA2060U PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 2 ACollector Current (Pulse) -ICP 3.5 ABase Current -IB 200 mA0.

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

LESHAN RADIO COMPANY, LTD.PNP Silicon GeneralL2SA2029QM3T5GPurpose Amplifier TransistorL2SA2029RM3T5GThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where board3space is at a premium. Reduces Board Space High hFE, 210-460 (Typical)2

SMD Type TransistorsPNP Transistors2SA2061SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-2.5A1 2 Collector Emitter Voltage VCEO=-20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Co

SMD Type TransistorsPNP Transistors2SA2071-QSOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-60V High speed switching.0.42 0.1 Complements the 2SC5824 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Colle

SMD Type TransistorsPNP Transistors2SA2058SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage:1 2 VCE (sat) = -0.19 V (max)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 High-speed switching: tf = 25 ns (typ.)1.9 -0.11.Base2.Emitter3.collector Absolute Max

SMD Type TransistorsPNP Transistors2SA2060SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V High-Speed Switching Applications0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Volt

SMD Type TransistorsPNP Transistors2SA2018SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 A collector current is large. Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2039DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC5706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2004DESCRIPTIONSilicon PNP epitaxial planner type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2022DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh-speed switching.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, lamp drivers, motor drivers, strobes.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2062DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS140V/10V,AF 70W output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2057DESCRIPTIONHigh speed switchingLow collector-emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supply for audio & visual equipments such asTVS and VCRSIndustrial equipments such as DC-DC convertersABSOLU

isc Silicon PNP Power Transistor 2SA2040DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC5707APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordrivers,flashABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2063DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdown100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS160V/12V,AF 90W output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SA2050DESCRIPTIONHigh DC current amplifier rateh :60-240@VCE=-5V,IC=-0.2AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral Purpose Switching and AmplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Vo

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2031DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdownComplement to Type 2SC5669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS230V/15A AF100W output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2097DESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , convertersOther general high current sw