2SA20 Datasheet. Equivalente

 0.1. Size:149K  toshiba
 2sa2056.pdf

2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Maximum Ratings (Ta = 25 C) Characteristics Symb

 0.2. Size:185K  toshiba
 2sa2034.pdf

2SA2034 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2034 High-Voltage Switching Applications Unit mm High voltage VCBO = -400 V High speed tf = 0.3 s (max) (IC = -1.0 A) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V DC IC -2

 0.3. Size:169K  toshiba
 2sa2061.pdf

2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (I = 0.5 A) C Low collector-emitter saturation voltage V = -0.19 V (max) CE (sat) High-speed switching t = 40 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristi

 0.4. Size:201K  toshiba
 2sa2066.pdf

2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (I = -0.2 A) C Low collector-emitter saturation voltage V = -0.19 V (max) CE (sat) High-speed switching t = 25 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 0.5. Size:189K  toshiba
 2sa2070.pdf

2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (I = -0.1 A) C Low collector-emitter saturation voltage V = -0.20 V (max) CE (sat) High-speed switching t = 70 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 0.6. Size:150K  toshiba
 2sa2058.pdf

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteri

 0.7. Size:196K  toshiba
 2sa2069.pdf

2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage V = -0.14 V (max) CE (sat) High-speed switching t = 37 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Uni

 0.8. Size:158K  toshiba
 2sa2060.pdf

2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.3 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteris

 0.9. Size:182K  toshiba
 2sa2059.pdf

2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (I = -0.5 A) C Low collector-emitter saturation voltage V = -0.19 V (max) CE (sat) High-speed switching t = 40 ns (typ.) f Maximum Ratings (Ta = 25 C) Characterist

 0.10. Size:194K  toshiba
 2sa2065.pdf

2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (I = -0.15 A) C Low collector-emitter saturation voltage V = -0.14 V (max) CE (sat) High-speed switching t = 37 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteris

 0.11. Size:148K  toshiba
 2sa2097.pdf

2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation VCE (sat) = -0.27 V (max) High-speed switching tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Colle

 0.12. Size:76K  sanyo
 2sa2099 2sc5888.pdf

Ordering number EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S

 0.13. Size:58K  sanyo
 2sa2040 2sc5707.pdf

Ordering number ENN6913A 2SA2040 / 2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

 0.14. Size:57K  sanyo
 2sa2016 2sc5569.pdf

Ordering number ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

 0.15. Size:51K  sanyo
 2sa2022 2sc5610.pdf

Ordering number ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2041A Features [2SA2022/2SC5610] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation voltage. High-

 0.16. Size:37K  sanyo
 2sa2098 2sa2098 2sc5887.pdf

Ordering number ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2098 / 2SC5887] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter satu

 0.17. Size:37K  sanyo
 2sa2044 2sc5710.pdf

Ordering number ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2045B [2SA2044 / 2SC5710] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collecto

 0.18. Size:37K  sanyo
 2sa2043 2sc5709.pdf

Ordering number ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2045B [2SA2043 / 2SC5709] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector

 0.19. Size:33K  sanyo
 2sa2031 2sc5669.pdf

Ordering number ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0

 0.20. Size:37K  sanyo
 2sa2040.pdf

 0.21. Size:29K  sanyo
 2sa2063 2sc5775.pdf

Ordering number ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2063 / 2SC5775] 15.6 3.2 4.8 14.0 2

 0.22. Size:29K  sanyo
 2sa2062 2sc5774.pdf

Ordering number ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2062 / 2SC5774] 15.6 3.2 4.8 14.0

 0.23. Size:50K  sanyo
 2sa2016 2sc5569.pdf

Ordering number ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High

 0.24. Size:50K  sanyo
 2sa2011 2sc5564.pdf

Ordering number ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2011/2SC5564] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

 0.25. Size:50K  sanyo
 2sa2013 2sc5566.pdf

Ordering number ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2013/2SC5566] 4.5 Adoption of FBET and MBIT processes. 1.5 1.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi

 0.26. Size:87K  sanyo
 2sa2012.pdf

Ordering number EN6306A 2SA2012 / 2SC5565 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2012 / 2SC5565 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, strobes. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized

 0.27. Size:38K  sanyo
 2sa2025.pdf

Ordering number ENN6404 PNP Epitaxial Planar Silicon Transistor 2SA2025 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2033A Features [2SA2025] 2.2 4.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. 0.4 0.5 High-speed switching.

 0.28. Size:49K  sanyo
 2sa2014 2sc5567.pdf

Ordering number ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2014/2SC5567] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

 0.29. Size:37K  sanyo
 2sa2037 2sc5694.pdf

Ordering number ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers and unit mm printer drivers. 2042B 8.0 [2SA2037 / 2SC5694] 4.0 3.3 1.0 1.0 Features Adoption of MBIT process. Large current capacity. 3.0 Low co

 0.30. Size:367K  sanyo
 2sa2039-tl-e.pdf

2SA2039/2SC5706 Ordering number EN6912C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA2039/2SC5706 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage

 0.31. Size:61K  sanyo
 2sa2039 2sc5706.pdf

Ordering number ENN6912B 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

 0.32. Size:40K  sanyo
 2sa2039 2sc5706.pdf

Ordering number ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit mm motor drivers, strobes. 2045B Features [2SA2039 / 2SC5706] Adoption of FBET, MBIT process. 6.5 2.3 5.0 Large current capacitance. 0.5 4

 0.33. Size:41K  sanyo
 2sa2023 2sc5611.pdf

Ordering number ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2165 Inverters, converters (strobes, flash, fluorescent lamp [2SA2023/2SC5611] lighting circuit). 8.0 4.0 Power amplifier (high-power car stereo,

 0.34. Size:57K  sanyo
 2sa2013 2sc5566.pdf

Ordering number ENN6307B 2SA2013 / 2SC5566 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2013 / 2SC5566 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag

 0.35. Size:49K  sanyo
 2sa2015 2sc5568.pdf

Ordering number ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2015/2SC5568] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw

 0.36. Size:83K  renesas
 2sa2081.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.37. Size:85K  renesas
 2sa2080.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.38. Size:52K  rohm
 2sa2007.pdf

2SA2007 Transistors High-speed Switching Transistor (-60V,-12A) 2SA2007 External dimensions (Units mm) Features 1) High switching speed. 10.0 4.5 (Typ. tf = 0.15 s at Ic = -6A) 3.2 2.8 2) Low saturation voltage. (Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SC5526. 0.8 ( ) (1) Base Gate 0.75 2.54 2.5

 0.39. Size:51K  rohm
 2sa2005.pdf

2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V, -1.5A) 2SA2005 Features External dimensions (Units mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = -160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 4) Wide SOA (safe operating area). 5) Complements the 2SC5511. 1.2 1.

 0.40. Size:301K  rohm
 2sa2092.pdf

1A / 60V Bipolar transistor 2SA2092 Features Dimensions (Unit mm) 1) High speed switching. (tf Typ. 30ns at IC = 1A) TSMT3 2) Low saturation voltage. (Typ. 200mV at IC = 500mA, IB = 50mA) 1.0MAX 2.9 3) Strong discharge resistance for inductive load and 0.85 0.4 0.7 capacitance load. 4) Low switching noise. ( ) 3 Applications ( ) ( ) 1 2

 0.41. Size:1677K  rohm
 2sa2030 2sa2018 2sa2119k.pdf

2SA2030 / 2SA2018 / 2SA2119K Datasheet Low frequency transistor(-12V, -500mA) lOutline l Parameter Value SOT-723 SOT-416 VCEO -12V IC -500mA 2SA2030 2SA2018 (VMT3) (EMT3) lFeatures l SOT-346 1)High current. 2)Collector-Emitter saturation voltage is low. VCE(sat) 250mA at IC=-200mA/IB=-10

 0.42. Size:97K  rohm
 2sa2093.pdf

2SA2093 Transistors Power transistor (-60V, -2A) 2SA2093 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 30ns at IC = -2A) 2) Low saturation voltage, typically (Typ. -200mV at IC = -1.0A, IB = -0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emi

 0.43. Size:45K  rohm
 2sa2017.pdf

2SA2017 Transistors Power Transistor (-80V, -4A) 2SA2017 Features 1) Low VCE(sat). (Typ. 0.3V at IC/IB = -2 / -0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage V

 0.44. Size:84K  rohm
 2sa2090.pdf

2SA2090 Transistors Medium power transistor (-60V, -0.5A) 2SA2090 Dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 35ns at IC = 500mA) 2.8 TSMT3 1.6 2) Low saturation voltage, typically. (Typ. -150mV at IC = -100mA, IB = -10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5868. (1) Base 0.3 0.6

 0.45. Size:97K  rohm
 2sa2089s.pdf

2SA2089S Transistors Medium power transistor (-60V, -0.5A) 2SA2089S External dimensions (Unit mm) Features 1) High speed switching. SPT 4.0 2.0 (Tf Typ. 60ns at IC = -500mA) (SC-72) 2) Low saturation voltage, typically (Typ. -150mV at IC = -100mA, IB = -10mA) 0.45 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitt

 0.46. Size:168K  rohm
 2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf

General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime

 0.47. Size:129K  rohm
 2sa2072.pdf

High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2072 Features Dimensions (Unit mm) 1) High speed switching. ( tf Typ. 20ns at IC = -3A) 2) Low saturation voltage, typically. CPT3 (SC-63) (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC582

 0.48. Size:44K  rohm
 2sa2049.pdf

2SA2049 Transistor Medium power transistor (-30V, -2.0A) 2SA2049 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -2.0A) 4.0 MPT3 1.0 2.5 0.5 2) Low saturation voltage, typically (1) (Typ. -250mV at IC = -1.0A, IB = -100mA) (2) 3) Strong discharge power for inductive load and (3) capacitance load. 4) Complements the 2S

 0.49. Size:43K  rohm
 2sa2047.pdf

2SA2047 Transistor Medium power transistor (-30V, -0.5A) 2SA2047 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 40ns at IC = -500mA) UMT3 2) Low saturation voltage, typically (Typ. -150mV at IC = -100A, IB = -100mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 4) Complements the 2SC5729 (1)Emitter Ea

 0.50. Size:2600K  rohm
 2sa2029 2sa1774eb 2sa1774 2sa1576ub 2sa1576a 2sa1037ak.pdf

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet General Purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1) General Purpose. 2) Complementary 2SC5658/2SC4617EB 2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

 0.51. Size:139K  rohm
 2sa2018 2sa2018 2sa2030 2sa2119k.pdf

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each

 0.52. Size:1342K  rohm
 2sa2029fha.pdf

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors AEC-Q101 Qualified Outline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 150mA Emitter Emitter 2SA2029 2SA1774EB 2SA2029FHA (SC-105AA) (SC-89) F

 0.53. Size:97K  rohm
 2sa2091s.pdf

2SA2091S Transistors Medium power transistor (-60V, -1A) 2SA2091S External dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 30ns at IC = -1A) SPT 4.0 2.0 2) Low saturation voltage, typically (SC-72) (Typ. -200mV at IC = -0.5A, IB = -50mA) 3) Strong discharge power for inductive load and 0.45 capacitance load. 2.5 0.5 0.45 4) Complements the 2SC

 0.54. Size:96K  rohm
 2sa2086s.pdf

2SA2086S Transistors Medium power transistor (-30V, -1A) 2SA2086S External dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -1A) 4.0 2.0 SPT 2) Low saturation voltage, typically (Typ. -150mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.45 capacitance load. 2.5 0.5 0.45 4) Complements the 2SC5874S 5

 0.55. Size:2821K  rohm
 2sa2029 2sa1774eb 2sa1774 2sa1576ub 2sa1576u3 2sa1037ak.pdf

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC

 0.56. Size:912K  rohm
 2sa2094.pdf

2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -60V Base IC -2A Emitter 2SA2094 lFeatures (SC-96) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SC5866 3) Low VCE(sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver

 0.57. Size:1274K  rohm
 2sa2088fra.pdf

AEC-Q101 Qualified Medium power transistor ( 60V, 0.5A) 2SA2088FRA Features Dimensions (Unit mm) 1) High speed switching. (Tf Typ. 60ns at IC = 500mA) UMT3 2) Low saturation voltage, typically 150mV at IC = 100mA, IB = 10mA) (Typ. 2.0 0.9 3) Strong discharge power for inductive load and capacitance load. 0.3 0.2 0.7 4) Complements the 2SC5876 2S

 0.58. Size:89K  rohm
 2sa2073.pdf

2SA2073 Transistors High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2073 Dimensions (Unit mm) Features 1) High speed switching. ( tf Typ. 20ns at IC = -3A) ATV 2) Low saturation voltage, typically. (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements t

 0.59. Size:1535K  rohm
 2sa2088.pdf

2SA2088 Datasheet Medium power transistor (-60V, -0.5A) lOutline l Parameter Value UMT3 VCEO -60V IC -0.5A SOT-323 SC-70 lFeatures l 1)High speed switching. lInner circuit l (Tf Typ. 60ns at IC=-500mA) 2)Low saturation voltage, typically (Typ. -150mV at IC=-100mA, IB=-10mA) 3)Strong discharge pow

 0.60. Size:1313K  rohm
 2sa2071.pdf

2SA2071 Datasheet Middle Power transistor (-60V, -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -60V IC -3A MPT3 lFeatures lInner circuit l l 1)High speed switching. 2)Low saturation voltage. (Typ. -200mV at IC=-2A, lB=-0.2A) 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SC5824 lA

 0.61. Size:44K  rohm
 2sa2048.pdf

2SA2048 Transistor Medium power transistor (-30V, -1.0A) 2SA2048 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -1.0A) 2.8 1.6 TSMT3 2) Low saturation voltage, typically (Typ. -150mV at IC = -500mA, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730 (1)Base Each l

 0.62. Size:96K  rohm
 2sa2087.pdf

2SA2087 Transistors Power transistor (-30V, -2A) 2SA2087 External dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 20ns at IC = -2A) ATV 2.5 6.8 2) Low saturation voltage, typically (Typ. -200mV at IC = -1.0A, IB = -100mA) 3) Strong discharge power for inductive load and 0.65Max. capacitance load. 0.5 (1) (2) (3) 4) Complements the 2SC5875 2

 0.63. Size:332K  onsemi
 2sa2040-e 2sa2040 2sc5707-e 2sc5707.pdf

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.64. Size:430K  onsemi
 2sa2040 2sc5707.pdf

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.65. Size:353K  onsemi
 2sa2016 2sc5569.pdf

Ordering number EN6309D 2SA2016/2SC5569 Bipolar Transistor http //onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

 0.66. Size:97K  onsemi
 nsv2sa2029m3t5g.pdf

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ

 0.67. Size:93K  onsemi
 2sa2029m3t5g.pdf

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ

 0.68. Size:326K  onsemi
 2sa2039-e 2sc5706-h 2sc5706 2sc5706.pdf

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.69. Size:286K  onsemi
 2sa2012.pdf

Ordering number EN6306B 2SA2012 Bipolar Transistor http //onsemi.com ( ) 30V, 5A, Low VCE sat PNP Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT processes Large current capacity Low collector to emitter saturation voltage Ultrasmall-sized package permitting applied sets to be made small and slim

 0.70. Size:45K  onsemi
 2sa2029m3-d.pdf

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210-460 (Typical) PNP GENERAL Low VCE(sat),

 0.71. Size:418K  onsemi
 2sa2039 2sc5706.pdf

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.72. Size:116K  onsemi
 2sa2029m3.pdf

2SA2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)

 0.73. Size:358K  onsemi
 2sa2013 2sc5566.pdf

Ordering number EN6307C 2SA2013/2SC5566 Bipolar Transistor http //onsemi.com (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini

 0.74. Size:362K  panasonic
 2sa2046.pdf

Transistors 2SA2046 Silicon PNP epitaxial planer type Unit mm For DC-DC converter 0.40+0.10 -0.05 0.16+0.10 1.45 -0.06 3 Features Low collector to emitter saturation voltage VCE(sat) Mini3-G1 type package, allowing downsizing and thinning of the 1 2 equipment and automatic insertion through the tape packing 0.95 0.95 1.90 0.20 2.90+0.20 Absolute Maximum Ratings Ta

 0.75. Size:50K  panasonic
 2sa2010.pdf

Transistors 2SA2010 Silicon PNP epitaxial planer type Unit mm For DC-DC converter 0.40+0.10 0.05 0.16+0.10 0.06 For various driver circuits 3 Features 1 2 Low collector to emitter saturation voltage VCE(sat) , large current (0.95) (0.95) capacitance 1.9 0.1 High-speed switching 2.90+0.20 0.05 Mini type 3-pin package, allowing downsizing and thinning o

 0.76. Size:78K  panasonic
 2sa2064.pdf

Power Transistors 2SA2064 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for audio & visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High speed switching (tstg storage time/tf fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 1.6 0.2

 0.77. Size:62K  panasonic
 2sa2004.pdf

Power Transistors 2SA2004 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 For power amplification 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package > 5 kV High-speed switching 1.4 0.2 2.6 0.1 1.6 0.2 0.8 0.1 0.55 0.15

 0.78. Size:43K  panasonic
 2sa2028.pdf

Transistors 2SA2028 Silicon PNP epitaxial planer type Unit mm For DC-DC converter 0.3+0.1 0.15+0.10 0.05 0.0 3 Features Large current capacitance Low collector to emitter saturation voltage 1 2 High-speed switching (0.65) (0.65) Small type package, allowing downsizing and thinning of the 1.3 0.1 equipment. 2.0 0.2 10 Absolute Maximum Ratings Ta =

 0.79. Size:71K  panasonic
 2sa2075.pdf

Power Transistors 2SA2075 Silicon PNP epitaxial planar type Unit mm Power supply for Audio & Visual equipments 10.0 0.2 5.0 0.1 1.0 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.2 0.1 C 1.0 High-speed switching (tstg storage time/tf fall time is short) 1.48 0.2 2.25 0.2 Low collector-emitter saturation voltage VCE(sat) 0.

 0.80. Size:74K  panasonic
 2sa2077.pdf

Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SC5845 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packing. 1.9 0.1 2.90+0.

 0.81. Size:80K  panasonic
 2sa2057.pdf

Power Transistors 2SA2057 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for audio & visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High speed switching (tstg storage time/tf fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 Supe

 0.82. Size:50K  panasonic
 2sa2009.pdf

Transistors 2SA2009 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 High collector-emitter voltage (Base open) VCEO Low noise voltage NV S-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing. 1 2 (0.65) (0.

 0.83. Size:74K  panasonic
 2sa2067.pdf

 0.84. Size:75K  panasonic
 2sa2078.pdf

Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SC5846 0.33+0.05 0.10+0.05 0.02 0.02 3 Features High forward current transfer ratio hFE 0.23+0.05 1 2 0.02 SSS-Mini type package, allowing downsizing of the equipment (0.40)(0.40) and automatic insertion through the tape packing and the maga- 0.80 0.05

 0.85. Size:72K  panasonic
 2sa2074.pdf

Power Transistors 2SA2074 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 0.86. Size:75K  panasonic
 2sa2084.pdf

Transistors 2SA2084 Silicon PNP epitaxial planar type Unit mm For general amplification 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High collector-emitter voltage (Base open) VCEO Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) Absolute Maximum Ratings Ta = 25 C 1.9 0.1 2.90+0.20

 0.87. Size:45K  panasonic
 2sa2021.pdf

Transistors 2SA2021 Silicon PNP epitaxial planer type Unit mm For general amplification 0.33+0.05 0.10+0.05 0.02 0.02 Complementary to 2SC5609 3 Features High foward current transfer ratio hFE 0.23+0.05 1 2 0.02 (0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the 0.80 0.05 equipment and automatic insertion through the tape packing 1.2

 0.88. Size:301K  utc
 2sa2016.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. ORDERING INFORMATION Order Number Pin Assignment Package Pa

 0.89. Size:142K  secos
 2sa2018f.pdf

2SA2018F PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-523 High Collector Current Dim Min Max Low VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mA A 1.50 1.70 B 0.78 A 0.82 C 0.80 0.82 L MARKING CODE D 0.28 0.32 BW 3 G 0.90 1.10 S B Top View 2 1 H 0.00 0.10 J 0.10 0.20 D K 0.35 0.41 G 3. Collector L 0.49 0

 0.90. Size:85K  isahaya
 2sa2026.pdf

 0.91. Size:45K  isahaya
 2sa2027.pdf

SMALL-SIGNAL TRANSISTOR 2SA2027 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) DESCRIPTION OUTLINE DRAWING Unit 2SA2027 is a super mini package resin sealed silicon PNP epitaxial transistor, FE rank 4.4 0.1 Lot No. It is designed for high voltage application. 1.6 0.1 . 1 2.5 0.1 FEATURE Small collector to emitte

 0.92. Size:81K  isahaya
 2sa2002.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 0.93. Size:581K  jiangsu
 2sa2029.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors 2SA2029 General urpose ransistors (PNP) SOT-723 FEATURES Excellent hFE linearity Complements the 2SC5658 1. BASE 2. EMITTER 3. COLLECTOR Marking FQ FR FS Absolute maximum ratings (Ta=25 ) Symbol Parameter Limit Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta

 0.94. Size:241K  jmnic
 2sa2031.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION With TO-3PN package Complement to type 2SC5669 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=

 0.95. Size:208K  lge
 2sa2018.pdf

2SA2018 SOT-523 Transistor(PNP) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features A collector current is large. Low VCE(sat). VCE(sat) -250mV at IC = -200mA / IB = -10mA MARKING BW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12

 0.96. Size:151K  wietron
 2sa2018.pdf

2SA2018 PNP Genera Purpose Transistors 3 P b Lead(Pb)-Free 1 2 FEATURES SOT-523(SC-75) * A collector current is large. * Low VCE(sat). VCE(sat) -250mV @ IC = -200mA / IB = -10mA MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector- Base Voltage VCBO -15 V -12 V Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO -6 V Collector Cur

 0.97. Size:415K  blue-rocket-elect
 2sa2050.pdf

2SA2050(BR3CA2050F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV

 0.98. Size:452K  semtech
 2sa200-y 2sa200-o.pdf

ST 2SA200 PNP Silicon Epitaxial Planar Transistor for general purpose and switching amplifier The transistor is subdivided into two group, O and Y according to its DC current gain. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 60 V Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO

 0.99. Size:591K  semtech
 st2sa2071u.pdf

ST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pw = 100 ms) -ICP 6 A 0.5 PC W Collector Power Dissipation 2 1

 0.100. Size:796K  semtech
 st2sa2060u.pdf

ST 2SA2060U PNP Silicon Epitaxial Planar Transistor for high speed switching, DC-DC converter and strobe applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 2 A Collector Current (Pulse) -ICP 3.5 A Base Current -IB 200 mA 0.

 0.101. Size:157K  lrc
 l2sa2029rm3t5g.pdf

 0.102. Size:125K  lrc
 s-l2sa2030m3t5g.pdf

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA

 0.103. Size:125K  lrc
 l2sa2030m3t5g.pdf

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA

 0.104. Size:290K  lrc
 l2sa2029qm3t5g.pdf

 0.105. Size:1040K  kexin
 2sa2061.pdf

SMD Type Transistors PNP Transistors 2SA2061 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-2.5A 1 2 Collector Emitter Voltage VCEO=-20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Co

 0.106. Size:1003K  kexin
 2sa2071-q.pdf

SMD Type Transistors PNP Transistors 2SA2071-Q SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-60V High speed switching. 0.42 0.1 Complements the 2SC5824 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Colle

 0.107. Size:1247K  kexin
 2sa2058.pdf

SMD Type Transistors PNP Transistors 2SA2058 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage 1 2 VCE (sat) = -0.19 V (max) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 High-speed switching tf = 25 ns (typ.) 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Max

 0.108. Size:1244K  kexin
 2sa2060.pdf

SMD Type Transistors PNP Transistors 2SA2060 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V High-Speed Switching Applications 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Volt

 0.109. Size:907K  kexin
 2sa2018.pdf

SMD Type Transistors PNP Transistors 2SA2018 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 A collector current is large. Low VCE(sat). VCE(sat) -250mV at IC = -200mA / IB = -10mA 3 0.3 0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll

 0.110. Size:268K  inchange semiconductor
 2sa2039.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2039 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested High allowable power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC5706 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

 0.111. Size:179K  inchange semiconductor
 2sa2004.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2004 DESCRIPTION Silicon PNP epitaxial planner type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

 0.112. Size:192K  inchange semiconductor
 2sa2022.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2022 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO High-speed switching. Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, lamp drivers, motor drivers, strobes. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 0.113. Size:188K  inchange semiconductor
 2sa2062.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2062 DESCRIPTION Large current capacitance Wide ASO and high durability against breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 140V/10V,AF 70W output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 0.114. Size:166K  inchange semiconductor
 2sa2057.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2057 DESCRIPTION High speed switching Low collector-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply for audio & visual equipments such as TVS and VCRS Industrial equipments such as DC-DC converters ABSOLU

 0.115. Size:234K  inchange semiconductor
 2sa2040.pdf

 0.116. Size:189K  inchange semiconductor
 2sa2063.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2063 DESCRIPTION Large current capacitance Wide ASO and high durability against breakdown 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 160V/12V,AF 90W output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 0.117. Size:204K  inchange semiconductor
 2sa2050.pdf

isc Silicon PNP Power Transistor 2SA2050 DESCRIPTION High DC current amplifier rate h 60-240@VCE=-5V,IC=-0.2A FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General Purpose Switching and Amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Vo

 0.118. Size:189K  inchange semiconductor
 2sa2031.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2031 DESCRIPTION Large current capacitance Wide ASO and high durability against breakdown Complement to Type 2SC5669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 230V/15A AF100W output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 0.119. Size:191K  inchange semiconductor
 2sa2097.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2097 DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters Other general high current sw