2SA201 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA201
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO1
2SA201 Transistor Equivalent Substitute - Cross-Reference Search
2SA201 Datasheet (PDF)
2sa2016 2sc5569.pdf
Ordering number : ENN6309B2SA2016 / 2SC5569PNP / NPN Epitaxial Planar Silicon Transistors2SA2016 / 2SC5569DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sa2016 2sc5569.pdf
Ordering number:ENN6309APNP/NPN Epitaxial Planar Silicon Transistors2SA2016/2SC5569DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2016/2SC5569]4.5 Adoption of FBET and MBIT processes.1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High
2sa2011 2sc5564.pdf
Ordering number:ENN6305PNP/NPN Epitaxial Planar Silicon Transistors2SA2011/2SC5564DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2011/2SC5564]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
2sa2013 2sc5566.pdf
Ordering number:ENN6307APNP/NPN Epitaxial Planar Silicon Transistors2SA2013/2SC5566DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2013/2SC5566]4.5 Adoption of FBET and MBIT processes.1.51.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi
2sa2012.pdf
Ordering number : EN6306A2SA2012 / 2SC5565SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2012 / 2SC5565DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, strobes.Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized
2sa2014 2sc5567.pdf
Ordering number:ENN6321PNP/NPN Epitaxial Planar Silicon Transistors2SA2014/2SC5567DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2014/2SC5567]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sa2013 2sc5566.pdf
Ordering number : ENN6307B2SA2013 / 2SC5566PNP / NPN Epitaxial Planar Silicon Transistors2SA2013 / 2SC5566DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sa2015 2sc5568.pdf
Ordering number:ENN6308PNP/NPN Epitaxial Planar Silicon Transistors2SA2015/2SC5568DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2015/2SC5568]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sa2030 2sa2018 2sa2119k.pdf
2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10
2sa2017.pdf
2SA2017TransistorsPower Transistor (-80V, -4A)2SA2017 Features1) Low VCE(sat). (Typ. 0.3V at IC/IB = -2 / -0.2A)2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).5) Complements the 2SC5574. Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage V
2sa2018 2sa2018 2sa2030 2sa2119k.pdf
2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each
2sa2016 2sc5569.pdf
Ordering number : EN6309D2SA2016/2SC5569Bipolar Transistorhttp://onsemi.com(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sa2012.pdf
Ordering number : EN6306B2SA2012Bipolar Transistorhttp://onsemi.com ( )30V, 5A, Low VCE sat PNP Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT processes Large current capacity Low collector to emitter saturation voltage Ultrasmall-sized package permitting applied sets to be made small and slim
2sa2013 2sc5566.pdf
Ordering number : EN6307C2SA2013/2SC5566Bipolar Transistorhttp://onsemi.com(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sa2010.pdf
Transistors2SA2010Silicon PNP epitaxial planer typeUnit: mmFor DC-DC converter0.40+0.100.050.16+0.100.06For various driver circuits3 Features1 2 Low collector to emitter saturation voltage VCE(sat) , large current(0.95) (0.95)capacitance1.90.1 High-speed switching2.90+0.200.05 Mini type 3-pin package, allowing downsizing and thinning o
2sa2016.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA2016 PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching *High allowable power dissipation. ORDERING INFORMATION Order Number Pin Assignment Package Pa
2sa2018f.pdf
2SA2018FPNP SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductFEATURESSOT-523High Collector CurrentDim Min MaxLow VCE(sat) - VCE(sat) -250mV at IC = -200mA/IB=-10mAA 1.50 1.70B 0.78A 0.82C 0.80 0.82LMARKING CODED 0.28 0.32BW3G 0.90 1.10SBTop View2 1H 0.00 0.10J 0.10 0.20DK 0.35 0.41G3. Collector L 0.49 0
2sa2018.pdf
2SA2018SOT-523 Transistor(PNP)1. BASE SOT-5232. EMITTER 3. COLLECTOR Features A collector current is large. Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA MARKING: BW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12
2sa2018.pdf
2SA2018PNP Genera Purpose Transistors3P b Lead(Pb)-Free12 FEATURES:SOT-523(SC-75)* A collector current is large. * Low VCE(sat). VCE(sat)-250mV @ IC = -200mA / IB = -10mA MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol ValueUnitsCollector- Base Voltage VCBO -15 V-12 VCollector-Emitter Voltage VCEOEmitter-Base Voltage VEBO -6 VCollector Cur
2sa2018.pdf
SMD Type TransistorsPNP Transistors2SA2018SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 A collector current is large. Low VCE(sat). VCE(sat)-250mV at IC = -200mA / IB = -10mA30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .