2SA470 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA470
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.055 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO1
2SA470 Transistor Equivalent Substitute - Cross-Reference Search
2SA470 Datasheet (PDF)
9.1. 2sa473.pdf 
Size:69K _wingshing
2SA473 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun
9.2. 2sa473.pdf Size:221K _inchange_semiconductor
isc Silicon PNP Power Transistor 2SA473DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1173Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio and car stereo output stage applications.ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2SA464 , 2SA465 , 2SA466 , 2SA467 , 2SA467G , 2SA468 , 2SA469 , 2SA47 , 2N2222 , 2SA471 , 2SA472 , 2SA473 , 2SA473G , 2SA473O , 2SA473R , 2SA473Y , 2SA474 .
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