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2SA473R Specs and Replacement


   Type Designator: 2SA473R
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202

 2SA473R Transistor Equivalent Substitute - Cross-Reference Search

   

2SA473R detailed specifications

 8.1. Size:69K  wingshing
2sa473.pdf pdf_icon

2SA473R

2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 10 W Jun... See More ⇒

 8.2. Size:221K  inchange semiconductor
2sa473.pdf pdf_icon

2SA473R

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Detailed specifications: 2SA469 , 2SA47 , 2SA470 , 2SA471 , 2SA472 , 2SA473 , 2SA473G , 2SA473O , BC548 , 2SA473Y , 2SA474 , 2SA475 , 2SA476 , 2SA477 , 2SA478 , 2SA479 , 2SA48 .

History: IDD1412 | MPS651RLRMG

Keywords - 2SA473R transistor specs

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History: IDD1412 | MPS651RLRMG

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