2SA483 Datasheet. Specs and Replacement
Type Designator: 2SA483 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO66
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2SA483 Substitution
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2SA483 datasheet
isc Silicon PNP Power Transistor 2SA483 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Complement to Type 2SC783 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Collector-Base... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SA489 DESCRIPTION With TO-220 package Low collector saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m... See More ⇒
Detailed specifications: 2SA475, 2SA476, 2SA477, 2SA478, 2SA479, 2SA48, 2SA480, 2SA482, BD679, 2SA484, 2SA484B, 2SA484R, 2SA484Y, 2SA485, 2SA485B, 2SA485R, 2SA485Y
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History: 2PB601AS | CPH6020
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