2SA485Y pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SA485Y Specs and Replacement

Type Designator: 2SA485Y

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO39

2SA485Y Substitution

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2SA485Y datasheet

8.1. Size:179K 1

2sa484 2sa485.pdf pdf_icon

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9.1. Size:162K jmnic

2sa483.pdf pdf_icon

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9.2. Size:155K jmnic

2sa489.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA489 DESCRIPTION With TO-220 package Low collector saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m... See More ⇒

9.3. Size:213K inchange semiconductor

2sa483.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA483 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Complement to Type 2SC783 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT Collector-Base... See More ⇒