All Transistors. 2SA495 Datasheet

 

2SA495 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA495

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO98-1

2SA495 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA495 Datasheet (PDF)

9.1. 2sa490.pdf Size:87K _toshiba

2SA495
2SA495

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.2. 2sa496 2sa505.pdf Size:94K _toshiba

2SA495
2SA495

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. 2sa497.pdf Size:42K _no

2SA495



9.4. 2sa490.pdf Size:159K _jmnic

2SA495
2SA495

JMnic Product Specification Silicon PNP Power Transistors 2SA490 DESCRIPTION ·With TO-220 package ·Complement to type 2SC790 APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE

 9.5. 2sa490.pdf Size:221K _inchange_semiconductor

2SA495
2SA495

isc Silicon PNP Power Transistor 2SA490 DESCRIPTION ·High Collector Current:: I = -3A C ·Collector-Emitter Breakdown Voltage : V = -40V(Min) (BR)CEO ·Complement to Type 2SC790 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·10 Watts output applications ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

9.6. 2sa496.pdf Size:217K _inchange_semiconductor

2SA495
2SA495

isc Silicon PNP Power Transistor 2SA496 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V = -30V (Min.) (BR)CEO ·Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top