All Transistors. 2SA495GY Datasheet

 

2SA495GY Datasheet and Replacement


   Type Designator: 2SA495GY
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
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2SA495GY Datasheet (PDF)

 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA495GY

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:87K  toshiba
 2sa490.pdf pdf_icon

2SA495GY

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:42K  no
 2sa497.pdf pdf_icon

2SA495GY

 9.4. Size:159K  jmnic
 2sa490.pdf pdf_icon

2SA495GY

JMnic Product Specification Silicon PNP Power Transistors 2SA490 DESCRIPTION With TO-220 package Complement to type 2SC790 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

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History: 2SC4370 | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A

Keywords - 2SA495GY transistor datasheet

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