All Transistors. 2SA499O Datasheet

 

2SA499O Datasheet and Replacement


   Type Designator: 2SA499O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO18
      - BJT Cross-Reference Search

   

2SA499O Datasheet (PDF)

 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA499O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:87K  toshiba
 2sa490.pdf pdf_icon

2SA499O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.3. Size:42K  no
 2sa497.pdf pdf_icon

2SA499O

 9.4. Size:159K  jmnic
 2sa490.pdf pdf_icon

2SA499O

JMnic Product Specification Silicon PNP Power Transistors 2SA490 DESCRIPTION With TO-220 package Complement to type 2SC790 APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

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History: RT1P441M | 2N3676 | 2SB1188-R | BTB1424AM3 | 3DD5G | 2N6129 | DTL1642

Keywords - 2SA499O transistor datasheet

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