All Transistors. 2SA503G Datasheet

 

2SA503G Datasheet and Replacement


   Type Designator: 2SA503G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO39
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2SA503G Datasheet (PDF)

 9.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA503G

 9.2. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA503G

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 9.3. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA503G

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.4. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA503G

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

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Datasheet: 2SA50 , 2SA500 , 2SA500O , 2SA500R , 2SA500Y , 2SA501 , 2SA502 , 2SA503 , BC556 , 2SA503O , 2SA503Y , 2SA504 , 2SA504G , 2SA504O , 2SA504Y , 2SA505 , 2SA505O .

History: KT8107D2 | HEPS0031 | UMA10N | UN9217R | 2N1056 | 2SC999A | ECG2306

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