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2SA503O Specs and Replacement


   Type Designator: 2SA503O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO39
 

 2SA503O Substitution

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2SA503O detailed specifications

 9.1. Size:756K  1
 2sa509.pdf pdf_icon

2SA503O

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 9.2. Size:94K  toshiba
 2sa496 2sa505.pdf pdf_icon

2SA503O

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 9.3. Size:306K  vishay
 vs-fa72sa50lc.pdf pdf_icon

2SA503O

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for ... See More ⇒

 9.4. Size:214K  inchange semiconductor
 2sa505.pdf pdf_icon

2SA503O

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO... See More ⇒

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Detailed specifications: 2SA500 , 2SA500O , 2SA500R , 2SA500Y , 2SA501 , 2SA502 , 2SA503 , 2SA503G , BC549 , 2SA503Y , 2SA504 , 2SA504G , 2SA504O , 2SA504Y , 2SA505 , 2SA505O , 2SA505R .

History: MUN5133DW1T1G | MUN5132T1G

Keywords - 2SA503O transistor specs

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