All Transistors. 2SA504G Datasheet

 

2SA504G Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA504G

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO39

2SA504G Transistor Equivalent Substitute - Cross-Reference Search

 

2SA504G Datasheet (PDF)

 9.1. Size:94K  toshiba
 2sa496 2sa505.pdf

2SA504G 2SA504G

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:306K  vishay
 vs-fa72sa50lc.pdf

2SA504G 2SA504G

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

 9.3. Size:214K  inchange semiconductor
 2sa505.pdf

2SA504G 2SA504G

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

Datasheet: 2SA500Y , 2SA501 , 2SA502 , 2SA503 , 2SA503G , 2SA503O , 2SA503Y , 2SA504 , TIP31 , 2SA504O , 2SA504Y , 2SA505 , 2SA505O , 2SA505R , 2SA505Y , 2SA506 , 2SA507 .

 

 
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