All Transistors. 2SA505Y Datasheet


2SA505Y Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SA505Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.55 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: X104-1

 2SA505Y Transistor Equivalent Substitute - Cross-Reference Search


2SA505Y Datasheet (PDF)

 8.1. Size:94K  toshiba
2sa496 2sa505.pdf

2SA505Y 2SA505Y

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:214K  inchange semiconductor

2SA505Y 2SA505Y

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO

 9.1. Size:756K  1

2SA505Y 2SA505Y

 9.2. Size:306K  vishay

2SA505Y 2SA505Y

VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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