2SA509GTM Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA509GTM
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
2SA509GTM Transistor Equivalent Substitute - Cross-Reference Search
2SA509GTM Datasheet (PDF)
9.1. 2sa496 2sa505.pdf 
Size:94K _toshiba
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.2. vs-fa72sa50lc.pdf Size:306K _vishay
VS-FA72SA50LCwww.vishay.comVishay SemiconductorsPower MOSFET, 72 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for
9.3. 2sa505.pdf Size:214K _inchange_semiconductor
isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBO
Datasheet: 2SA505R , 2SA505Y , 2SA506 , 2SA507 , 2SA508 , 2SA509 , 2SA509G , 2SB562-C , C106 , 2SA509O , 2SA509Y , 2SA51 , 2SA510 , 2SA510O , 2SA510R , 2SA511 , 2SA511O .
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