2SA509Y Datasheet. Specs and Replacement

Type Designator: 2SA509Y  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

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2SA509Y datasheet

 8.1. Size:756K  1

 2sa509.pdf pdf_icon

2SA509Y

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 9.1. Size:94K  toshiba

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2SA509Y

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 9.2. Size:306K  vishay

 vs-fa72sa50lc.pdf pdf_icon

2SA509Y

VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL approved file E78996 Designed for ... See More ⇒

 9.3. Size:214K  inchange semiconductor

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2SA509Y

isc Silicon PNP Power Transistor 2SA505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.8V (Max.)@ I = -500mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO... See More ⇒

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Detailed specifications: 2SA506, 2SA507, 2SA508, 2SA509, 2SA509G, 2SB562-C, 2SA509GTM, 2SA509O, TIP120, 2SA51, 2SA510, 2SA510O, 2SA510R, 2SA511, 2SA511O, 2SA511R, 2SA512

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