2SA51 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA51
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO1
2SA51 Transistor Equivalent Substitute - Cross-Reference Search
2SA51 Datasheet (PDF)
0.1. 2sa5153.pdf 
Size:279K _onsemi
2SA2153 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION2Typical Applications Voltage Regulators 1: Base1 2 : Collector Relay Drivers 3 : Emitter Lamp Drivers Electrical Equipment 3SPECIFICATIONS M
Datasheet: 2SA507 , 2SA508 , 2SA509 , 2SA509G , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2N60 , 2SA510 , 2SA510O , 2SA510R , 2SA511 , 2SA511O , 2SA511R , 2SA512 , 2SA512O .
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