2SA51 Datasheet. Specs and Replacement

Type Designator: 2SA51  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.06 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.005 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO1

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2SA51 datasheet

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2SA51

2SA2153 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION 2 Typical Applications Voltage Regulators 1 Base 1 2 Collector Relay Drivers 3 Emitter Lamp Drivers Electrical Equipment 3 SPECIFICATIONS M... See More ⇒

Detailed specifications: 2SA507, 2SA508, 2SA509, 2SA509G, 2SB562-C, 2SA509GTM, 2SA509O, 2SA509Y, B647, 2SA510, 2SA510O, 2SA510R, 2SA511, 2SA511O, 2SA511R, 2SA512, 2SA512O

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