2SA510O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA510O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
2SA510O Transistor Equivalent Substitute - Cross-Reference Search
2SA510O Datasheet (PDF)
2sa5153.pdf
2SA2153 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION2Typical Applications Voltage Regulators 1: Base1 2 : Collector Relay Drivers 3 : Emitter Lamp Drivers Electrical Equipment 3SPECIFICATIONS M
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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