2SA510O Datasheet. Specs and Replacement

Type Designator: 2SA510O  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO39

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2SA510O datasheet

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2SA510O

2SA2153 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION 2 Typical Applications Voltage Regulators 1 Base 1 2 Collector Relay Drivers 3 Emitter Lamp Drivers Electrical Equipment 3 SPECIFICATIONS M... See More ⇒

Detailed specifications: 2SA509, 2SA509G, 2SB562-C, 2SA509GTM, 2SA509O, 2SA509Y, 2SA51, 2SA510, D667, 2SA510R, 2SA511, 2SA511O, 2SA511R, 2SA512, 2SA512O, 2SA512R, 2SA513

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