2SA510O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA510O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO39
2SA510O Transistor Equivalent Substitute - Cross-Reference Search
2SA510O Datasheet (PDF)
9.1. 2sa5153.pdf 
Size:279K _onsemi
2SA2153 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION2Typical Applications Voltage Regulators 1: Base1 2 : Collector Relay Drivers 3 : Emitter Lamp Drivers Electrical Equipment 3SPECIFICATIONS M
Datasheet: 2SA509 , 2SA509G , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 , 2SA510 , BC517 , 2SA510R , 2SA511 , 2SA511O , 2SA511R , 2SA512 , 2SA512O , 2SA512R , 2SA513 .
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