2SA510O Specs and Replacement
Type Designator: 2SA510O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO39
2SA510O Substitution
2SA510O datasheet
2sa5153.pdf
2SA2153 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single www.onsemi.com Features Adoption of MBIT Process Low Saturation Voltage Large Current Capacity and Wide ASO ELECTRICAL CONNECTION 2 Typical Applications Voltage Regulators 1 Base 1 2 Collector Relay Drivers 3 Emitter Lamp Drivers Electrical Equipment 3 SPECIFICATIONS M... See More ⇒
Detailed specifications: 2SA509 , 2SA509G , 2SB562-C , 2SA509GTM , 2SA509O , 2SA509Y , 2SA51 , 2SA510 , D667 , 2SA510R , 2SA511 , 2SA511O , 2SA511R , 2SA512 , 2SA512O , 2SA512R , 2SA513 .
History: CSA614R
Keywords - 2SA510O pdf specs
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History: CSA614R
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BJT: GA1A4M | SBT42 | 2SA200-Y
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