2SA60 Datasheet. Specs and Replacement

Type Designator: 2SA60

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.055 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector Current |Ic max|: 0.005 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO44

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2SA60 datasheet

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2sa608n 2sc536n.pdf pdf_icon

2SA60

Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒

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2sa608 2sc536n.pdf pdf_icon

2SA60

Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter ... See More ⇒

Detailed specifications: 2SA580, 2SA581, 2SA59, 2SA594, 2SA594O, 2SA594R, 2SA594Y, 2SA597, 2N2222, 2SA603, 2SA604, 2SA605, 2SA606, 2SA606S, 2SA607, 2SA607S, 2SA608

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