2SA608NP Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA608NP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO92
2SA608NP Transistor Equivalent Substitute - Cross-Reference Search
2SA608NP Datasheet (PDF)
7.1. 2sa608n 2sc536n.pdf 
Size:36K _sanyo
Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441
7.2. 2sa608n.pdf Size:77K _secos
2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G HAPPLICATIONS EmitterCollector Capable of being used in the low frequency to Base Jhigh frequency range. A DMillimeterREF.B Min.
8.1. 2sa608 2sc536n.pdf Size:40K _sanyo
Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter
8.2. 2sa608.pdf Size:428K _secos
2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Capable of being used in the low frequency to high frequency range. G Large current capacity and wide ASO. HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA60
8.3. 2sa608.pdf Size:239K _lge
2SA608(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -30 VDimensions in inches and (mil
8.4. 2sa608s.pdf Size:94K _wej
RoHS 2SA608S 2SA608S TRANSISTOR (PNP) TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25) 3. BASE Collector current ICM : -100 mA 123 Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Datasheet: 2SA605 , 2SA606 , 2SA606S , 2SA607 , 2SA607S , 2SA608 , 2SA608K , 2SA608KNP , 13009 , 2SA608SP , 2SA609 , 2SA609NP , 2SA609SP , 2SA61 , 2SA610 , 2SA611 , 2SA612 .
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