2SA610 Datasheet. Specs and Replacement

Type Designator: 2SA610  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 85 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO92

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2SA610 datasheet

 9.1. Size:217K  inchange semiconductor

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2SA610

isc Silicon PNP Power Transistor 2SA614 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -55V (Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -0.5V (Max.)@ I = -1A CE(sat) C Collector Power Dissipation- P = 25W@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplif... See More ⇒

Detailed specifications: 2SA608K, 2SA608KNP, 2SA608NP, 2SA608SPA, 2SA609, 2SA609NP, 2SA609SP, 2SA61, D882, 2SA611, 2SA612, 2SA613, 2SA614, 2SA615, 2SA616, 2SA617, 2SA617K

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