2SA645 Datasheet. Specs and Replacement
Type Designator: 2SA645
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Package: TO202
2SA645 Substitution
- BJT ⓘ Cross-Reference Search
2SA645 datasheet
isc Silicon PNP Power Transistor 2SA648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒
Detailed specifications: 2SA638S, 2SA639, 2SA639S, 2SA64, 2SA640, 2SA641, 2SA642, 2SA643, 2SC2655, 2SA646, 2SA647, 2SA648, 2SA649, 2SA65, 2SA650, 2SA651, 2SA652
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