2SA645 Datasheet. Specs and Replacement

Type Designator: 2SA645

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 7 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO202

 2SA645 Substitution

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isc Silicon PNP Power Transistor 2SA648 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

Detailed specifications: 2SA638S, 2SA639, 2SA639S, 2SA64, 2SA640, 2SA641, 2SA642, 2SA643, 2SC2655, 2SA646, 2SA647, 2SA648, 2SA649, 2SA65, 2SA650, 2SA651, 2SA652

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