2SA66 Datasheet. Specs and Replacement

Type Designator: 2SA66

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO1

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2SA66 datasheet

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2SA66

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 0.2. Size:145K  jmnic

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2SA66

JMnic Product Specification Silicon PNP Power Transistors 2SA663 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC793 APPLICATIONS For radio frequency,audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(... See More ⇒

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2SA66

isc Silicon PNP Power Transistor 2SA663 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -2.3V(Max.)@ I = -5A CE(sat) C Complement to Type 2SC793 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: 2SA656, 2SA656A, 2SA657, 2SA657A, 2SA658, 2SA658A, 2SA659, 2SA659NP, TIP142, 2SA661, 2SA663, 2SA666, 2SA666A, 2SA668, 2SA669, 2SA67, 2SA670

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