2SA666
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA666
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 25
V
Maximum Collector-Emitter Voltage |Vce|: 25
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 70
MHz
Collector Capacitance (Cc): 6
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO92
2SA666
Transistor Equivalent Substitute - Cross-Reference Search
2SA666
Datasheet (PDF)
9.2. Size:145K jmnic
2sa663.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA663 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC793 APPLICATIONS For radio frequency,audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(
9.3. Size:198K inchange semiconductor
2sa663.pdf
isc Silicon PNP Power Transistor 2SA663DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = -2.3V(Max.)@ I = -5ACE(sat) CComplement to Type 2SC793Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RAT
Datasheet: 2N3200
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