All Transistors. 2SA666A Datasheet

 

2SA666A Datasheet and Replacement


   Type Designator: 2SA666A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO92
 

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2SA666A Datasheet (PDF)

 9.1. Size:50K  1
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2SA666A

 9.2. Size:145K  jmnic
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2SA666A

JMnic Product Specification Silicon PNP Power Transistors 2SA663 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC793 APPLICATIONS For radio frequency,audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(

 9.3. Size:198K  inchange semiconductor
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2SA666A

isc Silicon PNP Power Transistor 2SA663DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOCollector-Emitter Saturation Voltage-: V = -2.3V(Max.)@ I = -5ACE(sat) CComplement to Type 2SC793Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RAT

Datasheet: 2SA658 , 2SA658A , 2SA659 , 2SA659NP , 2SA66 , 2SA661 , 2SA663 , 2SA666 , TIP32C , 2SA668 , 2SA669 , 2SA67 , 2SA670 , 2SA671 , 2SA671A , 2SA671B , 2SA671C .

History: 2SA549A | B772Q | MJE2801T | 2SC1874 | TPV597 | KSE44H-10 | MJE710

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