2SA669 Datasheet. Specs and Replacement

Type Designator: 2SA669

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

 2SA669 Substitution

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2SA669 datasheet

 9.1. Size:50K  1

 2sa661.pdf pdf_icon

2SA669

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 9.2. Size:145K  jmnic

 2sa663.pdf pdf_icon

2SA669

JMnic Product Specification Silicon PNP Power Transistors 2SA663 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC793 APPLICATIONS For radio frequency,audio frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(... See More ⇒

 9.3. Size:198K  inchange semiconductor

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2SA669

isc Silicon PNP Power Transistor 2SA663 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min.) (BR)CEO Collector-Emitter Saturation Voltage- V = -2.3V(Max.)@ I = -5A CE(sat) C Complement to Type 2SC793 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒

Detailed specifications: 2SA659, 2SA659NP, 2SA66, 2SA661, 2SA663, 2SA666, 2SA666A, 2SA668, TIP32C, 2SA67, 2SA670, 2SA671, 2SA671A, 2SA671B, 2SA671C, 2SA671K, 2SA672

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