All Transistors. 2SA671B Datasheet

 

2SA671B Datasheet and Replacement


   Type Designator: 2SA671B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220
 

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2SA671B Datasheet (PDF)

 8.1. Size:116K  mospec
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2SA671B

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 8.2. Size:159K  jmnic
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2SA671B

JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 8.3. Size:205K  inchange semiconductor
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2SA671B

isc Silicon PNP Power Transistor 2SA671DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -2.0ACE(SUS) CDC Current Gain: h = 35-320@ I = -0.5AFE CComplement to Type 2SC1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ASZ20 | BF491K | TPV595 | NA31L | NB112H | PDTA115EU | 2N5666SMD05

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