2SA671C Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA671C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SA671C Transistor Equivalent Substitute - Cross-Reference Search
2SA671C Datasheet (PDF)
2sa671.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o
2sa671.pdf
isc Silicon PNP Power Transistor 2SA671DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -2.0ACE(SUS) CDC Current Gain: h = 35-320@ I = -0.5AFE CComplement to Type 2SC1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
