2SA709 Datasheet. Specs and Replacement
Type Designator: 2SA709 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
2SA709 Substitution
- BJT ⓘ Cross-Reference Search
2SA709 datasheet
isc Silicon PNP Power Transistor 2SA700 DESCRIPTION High Collector Current -I = -1.5A C Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Detailed specifications: 2SA704, 2SA706, 2SA706-2, 2SA706-3, 2SA706-4, 2SA707, 2SA708, 2SA708A, S9014, 2SA71, 2SA710, 2SA711, 2SA712, 2SA713, 2SA713A, 2SA713AS, 2SA713S
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