2SA709 Datasheet and Replacement
Type Designator: 2SA709
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
2SA709 Transistor Equivalent Substitute - Cross-Reference Search
2SA709 Datasheet (PDF)
2sa700.pdf
isc Silicon PNP Power Transistor 2SA700 DESCRIPTION High Collector Current -I = -1.5A C Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
Datasheet: 2SA704 , 2SA706 , 2SA706-2 , 2SA706-3 , 2SA706-4 , 2SA707 , 2SA708 , 2SA708A , S9014 , 2SA71 , 2SA710 , 2SA711 , 2SA712 , 2SA713 , 2SA713A , 2SA713AS , 2SA713S .
History: IMD9AFRA | CHEMH9GP | CIL157B | 2SD1745 | AC138-4 | MPS4249 | MPS2907A
Keywords - 2SA709 transistor datasheet
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History: IMD9AFRA | CHEMH9GP | CIL157B | 2SD1745 | AC138-4 | MPS4249 | MPS2907A
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