2SA768 Datasheet. Specs and Replacement

Type Designator: 2SA768  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

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2SA768 datasheet

 ..1. Size:147K  jmnic

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2SA768

JMnic Product Specification Silicon PNP Power Transistors 2SA768 DESCRIPTION With TO-220 package Complement to type 2SC1826 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER... See More ⇒

 ..2. Size:216K  inchange semiconductor

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2SA768

isc Silicon PNP Power Transistor 2SA768 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60(V)(Min.) (BR)CEO Complement to Type 2SC1826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒

 9.1. Size:69K  wingshing

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2SA768

2SA769 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Jun... See More ⇒

 9.2. Size:154K  jmnic

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2SA768

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Detailed specifications: 2SA762-1, 2SA762-2, 2SA763, 2SA764, 2SA765, 2SA766, 2SA766S, 2SA767, S8050, 2SA769, 2SA77, 2SA770, 2SA771, 2SA772, 2SA772-1, 2SA772-2, 2SA773

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