All Transistors. 2SA768 Datasheet

 

2SA768 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA768
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126

 2SA768 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA768 Datasheet (PDF)

 ..1. Size:147K  jmnic
2sa768.pdf

2SA768
2SA768

JMnic Product SpecificationSilicon PNP Power Transistors 2SA768 DESCRIPTION With TO-220 package Complement to type 2SC1826 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

 ..2. Size:216K  inchange semiconductor
2sa768.pdf

2SA768
2SA768

isc Silicon PNP Power Transistor 2SA768DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -60(V)(Min.)(BR)CEOComplement to Type 2SC1826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 9.1. Size:69K  wingshing
2sa769.pdf

2SA768

2SA769 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Jun

 9.2. Size:154K  jmnic
2sa766.pdf

2SA768
2SA768

JMnic Product Specification Silicon PNP Power Transistors 2SA766 DESCRIPTION With TO-66 package High power dissipation Complement to type 2SC1450 APPLICATIONS Line-operated vertical deflection output Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=

 9.3. Size:153K  jmnic
2sa765.pdf

2SA768
2SA768

JMnic Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION With TO-66 package Low collector saturation voltage APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER C

 9.4. Size:147K  jmnic
2sa769.pdf

2SA768
2SA768

JMnic Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION With TO-220 package Complement to type 2SC1827 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE

 9.5. Size:153K  jmnic
2sa764.pdf

2SA768
2SA768

JMnic Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2SC1444 APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratin

 9.6. Size:209K  inchange semiconductor
2sa766.pdf

2SA768
2SA768

isc Silicon PNP Power Transistor 2SA766DESCRIPTIONCollector-Base Breakdown Voltage-: V = -150V(Min)(BR)CBOHigh Collector Power Dissipation-Complement to Type 2SC1450Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLine-operated vertical deflection outputMedium power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY

 9.7. Size:207K  inchange semiconductor
2sa765.pdf

2SA768
2SA768

isc Silicon PNP Power Transistor 2SA765DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SC1445Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MA

 9.8. Size:180K  inchange semiconductor
2sa762.pdf

2SA768
2SA768

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA762DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 9.9. Size:216K  inchange semiconductor
2sa769.pdf

2SA768
2SA768

isc Silicon PNP Power Transistor 2SA769DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -80(V)(Min.)(BR)CEOComplement to Type 2SC1827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 9.10. Size:208K  inchange semiconductor
2sa764.pdf

2SA768
2SA768

isc Silicon PNP Power Transistor 2SA764DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SC1444Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MA

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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