2SA796 Specs and Replacement
Type Designator: 2SA796
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 45000
Package: TO92
2SA796 Substitution
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2SA796 datasheet
Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SC1567, 2SC1567A 3.16 0.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier TO-126B package which requi... See More ⇒
Detailed specifications: 2SA790M, 2SA791, 2SA793, 2SA794, 2SA794A, 2SA795, 2SA795A, 2SA795B, S9013, 2SA797, 2SA798, 2SA799, 2SA80, 2SA800, 2SA801, 2SA802, 2SA803
Keywords - 2SA796 pdf specs
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