2SA811C6 Datasheet. Specs and Replacement
Type Designator: 2SA811C6 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO236
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2SA811C6 datasheet
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
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FM120-M WILLAS 2SA812xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low pr FEATUREofile surface mounted application in order to o... See More ⇒
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2SA812 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 2SC1623 Complementary pair with 2SC1623. / Applications Audio frequency amplifier application. / Equivalent Circuit / Pinning ... See More ⇒
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SMD Type SMD Type Transistors PNP Transistors 2SA812 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) 1 2 High Voltage VCEO = -50 V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO ... See More ⇒
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Product specification Silicon Epitaxial Planar Transistor 2SA812 FEATURES Pb Commplementary to 2SC1623. Lead-free High DC current gain h =200typ. FE (V =-6.0V,I =-1.0mA) CE C High Voltage V =-50V. CEO APPLICATIONS Audio frequency, general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA812 M4/M5/M6/M7 SOT-23 ... See More ⇒
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SA812 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -60 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - Co... See More ⇒
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2SA812 BIPOLAR TRANSISTOR (PNP) FEATURES High DC current gain h =200(Typ) V = -6V,I = -1mA FE CE C High voltage V = -50V CEO Surface Mount device Complementary to 2SC1623 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unles... See More ⇒
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA814 2SA815 DESCRIPTION With TO-220 package Complement to type 2SC1624/1625 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline... See More ⇒
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isc Silicon PNP Power Transistor 2SA814 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120(V)(Min.) (BR)CEO Complement to Type 2SC1624 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
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2sa815.pdf
isc Silicon PNP Power Transistor 2SA815 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100(V)(Min.) (BR)CEO Complement to Type 2SC1625 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: 2SA810, 2SA811, 2SA811A, 2SA811AC15, 2SA811AC16, 2SA811AC17, 2SA811AC18, 2SA811C5, S9018, 2SA811C7, 2SA811C8, 2SA812, 2SA812M3, 2SA812M4, 2SA812M5, 2SA812M6, 2SA812M7
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