All Transistors. 2SA817AY Datasheet

 

2SA817AY Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA817AY
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92

 2SA817AY Transistor Equivalent Substitute - Cross-Reference Search

   

2SA817AY Datasheet (PDF)

 7.1. Size:173K  toshiba
2sa817a.pdf

2SA817AY
2SA817AY

 7.2. Size:232K  lge
2sa817a to-92mod.pdf

2SA817AY
2SA817AY

2SA817A TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features 8.4008.800 Complementary to 2SC1627A. 0.9001.100 Driver Stage Application of 30 to 0.4000.60035 Watts Amplifiers. 13.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.1000.000 1.600

 8.1. Size:209K  toshiba
2sa817.pdf

2SA817AY
2SA817AY

2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC1627. Suitable for driver of 20~25 watts audio amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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