2SA817AY pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SA817AY Specs and Replacement

Type Designator: 2SA817AY

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO92

2SA817AY Substitution

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2SA817AY datasheet

7.1. Size:173K toshiba

2sa817a.pdf pdf_icon

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7.2. Size:232K lge

2sa817a to-92mod.pdf pdf_icon

2SA817A TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features 8.400 8.800 Complementary to 2SC1627A. 0.900 1.100 Driver Stage Application of 30 to 0.400 0.600 35 Watts Amplifiers. 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.100 0.000 1.600... See More ⇒

8.1. Size:209K toshiba

2sa817.pdf pdf_icon

2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC1627. Suitable for driver of 20 25 watts audio amplifiers. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEB... See More ⇒

Detailed specifications: 2SA813S3, 2SA813S4, 2SA814, 2SA815, 2SA816, 2SA817, 2SA817A, 2SA817AO, C945, 2SA818, 2SA819, 2SA82, 2SA820, 2SA821, 2SA822, 2SA823, 2SA824